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Hartmann, J.M., Burdin, M., Rolland, G., Billon, T. (2006) Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces. Journal of Crystal Growth, 294 (2). 288-295 doi:10.1016/j.jcrysgro.2006.06.043

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Reference TypeJournal (article/letter/editorial)
TitleGrowth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces
JournalJournal of Crystal Growth
AuthorsHartmann, J.M.Author
Burdin, M.Author
Rolland, G.Author
Billon, T.Author
Year2006 (September)Volume294
Issue2
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2006.06.043Search in ResearchGate
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Mindat Ref. ID2886876Long-form Identifiermindat:1:5:2886876:7
GUID0
Full ReferenceHartmann, J.M., Burdin, M., Rolland, G., Billon, T. (2006) Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces. Journal of Crystal Growth, 294 (2). 288-295 doi:10.1016/j.jcrysgro.2006.06.043
Plain TextHartmann, J.M., Burdin, M., Rolland, G., Billon, T. (2006) Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces. Journal of Crystal Growth, 294 (2). 288-295 doi:10.1016/j.jcrysgro.2006.06.043
In(2006, September) Journal of Crystal Growth Vol. 294 (2) Elsevier BV

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Destefanis, V., Hartmann, J.M., Abbadie, A., Papon, A.M., Billon, T. (2009) Growth and structural properties of SiGe virtual substrates on Si(100), (110) and (111). Journal of Crystal Growth, 311 (4). 1070-1079 doi:10.1016/j.jcrysgro.2008.12.034
Hartmann, J.M, Clavelier, L, Jahan, C, Holliger, P, Rolland, G, Billon, T, Defranoux, C (2004) Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains. Journal of Crystal Growth, 264 (1). 36-47 doi:10.1016/j.jcrysgro.2003.12.055
Hartmann, J.M., Papon, A.M., Barnes, J.P., Billon, T. (2009) Growth kinetics of SiGe/Si superlattices on bulk and silicon-on-insulator substrates for multi-channel devices. Journal of Crystal Growth, 311 (11). 3152-3157 doi:10.1016/j.jcrysgro.2009.03.027
Hartmann, J.M., Papon, A.M., Destefanis, V., Billon, T. (2008) Reduced pressure chemical vapor deposition of Ge thick layers on Si(001), Si(011) and Si(111). Journal of Crystal Growth, 310 (24). 5287-5296 doi:10.1016/j.jcrysgro.2008.08.062
Hartmann, J.M., Holliger, P., Laugier, F., Rolland, G., Suhm, A., Ernst, T., Billon, T., Vulliet, N. (2005) Growth of SiGe/Si superlattices on silicon-on-insulator substrates for multi-bridge channel field effect transistors. Journal of Crystal Growth, 283 (1). 57-67 doi:10.1016/j.jcrysgro.2005.05.068
Hartmann, J.M., Bertin, F., Rolland, G., Laugier, F., Séméria, M.N. (2003) Selective epitaxial growth of Si and SiGe for metal oxide semiconductor transistors. Journal of Crystal Growth, 259 (4). 419-427 doi:10.1016/j.jcrysgro.2003.07.024
Bogumilowicz, Y., Hartmann, J.M., Rolland, G., Billon, T. (2005) SiGe high-temperature growth kinetics in reduced pressure-chemical vapor deposition. Journal of Crystal Growth, 274 (1). 28-37 doi:10.1016/j.jcrysgro.2004.09.093
Hartmann, J.M., Damlencourt, J.-F., Bogumilowicz, Y., Holliger, P., Rolland, G., Billon, T. (2005) Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes. Journal of Crystal Growth, 274 (1). 90-99 doi:10.1016/j.jcrysgro.2004.10.042
Bogumilowicz, Y., Hartmann, J.M., Di Nardo, C., Holliger, P., Papon, A.-M., Rolland, G., Billon, T. (2006) High-temperature growth of very high germanium content SiGe virtual substrates. Journal of Crystal Growth, 290 (2). 523-531 doi:10.1016/j.jcrysgro.2006.02.019
Hartmann, J.M., Bogumilowciz, Y., Abbadie, A., Fillot, F., Billon, T. (2008) Impact of the H2 bake temperature on the structural properties of tensily strained Si layers on SiGe. Journal of Crystal Growth, 310 (10). 2493-2502 doi:10.1016/j.jcrysgro.2008.01.033
Hartmann, J.M., Abbadie, A., Barnes, J.P., Fédéli, J.M., Billon, T., Vivien, L. (2010) Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si. Journal of Crystal Growth, 312 (4). 532-541 doi:10.1016/j.jcrysgro.2009.11.056
 
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