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Sudersena Rao, T., Horikoshi, Y. (1991) Growth of (GaAs)1−x(Si2)x metastable alloys using migration-enhanced epitaxy. Journal of Crystal Growth, 115 (1). 328-332 doi:10.1016/0022-0248(91)90763-u

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of (GaAs)1−x(Si2)x metastable alloys using migration-enhanced epitaxy
JournalJournal of Crystal Growth
AuthorsSudersena Rao, T.Author
Horikoshi, Y.Author
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90763-uSearch in ResearchGate
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Mindat Ref. ID2803928Long-form Identifiermindat:1:5:2803928:6
GUID0
Full ReferenceSudersena Rao, T., Horikoshi, Y. (1991) Growth of (GaAs)1−x(Si2)x metastable alloys using migration-enhanced epitaxy. Journal of Crystal Growth, 115 (1). 328-332 doi:10.1016/0022-0248(91)90763-u
Plain TextSudersena Rao, T., Horikoshi, Y. (1991) Growth of (GaAs)1−x(Si2)x metastable alloys using migration-enhanced epitaxy. Journal of Crystal Growth, 115 (1). 328-332 doi:10.1016/0022-0248(91)90763-u
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

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Rao, T. Sudersena, Nozawa, K., Horikoshi, Y. (1993) Migration enhanced epitaxy growth of GaAs on Si with (GaAs)1−x(Si2)xGaAs strained layer superlattice buffer layers. Applied Physics Letters, 62 (2). 154-156 doi:10.1063/1.109355
Rao, T. Sudersena, Nozawa, Kazuhiko, Horikoshi, Yoshiji (1991) Structural Properties of (GaAs)1-x(Si2)xLayers on GaAs(100) Substrates Grown by Migration-Enhanced Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l547
Horikoshi, Yoshiji, Kawashima, Minoru, Kobayashi, Naoki (1991) Optical investigation of GaAs growth process in molecular beam epitaxy and migration-enhanced epitaxy. Journal of Crystal Growth, 111 (1). 200-204 doi:10.1016/0022-0248(91)90971-7
Sudersena Rao, T., Nozawa, K., Horikoshi, Y. (1992) Growth of GaAs on hydrogen‐fluoride treated Si (100) surfaces using migration‐enhanced epitaxy. Applied Physics Letters, 60 (13). 1606-1608 doi:10.1063/1.107240
Horikoshi, Yoshiji, Kawashima, Minoru (1989) Migration-enhanced epitaxy of GaAs and AlGaAs. Journal of Crystal Growth, 95 (1). 17-22 doi:10.1016/0022-0248(89)90341-2
Takei, Hideo, Hamada, Tomoji, Hariu, Takashi (1991) Plasma-assisted epitaxy of InAs layers on GaAs. Journal of Crystal Growth, 115 (1). 309-312 doi:10.1016/0022-0248(91)90759-x
Iwai, S., Meguro, T., Aoyagi, Y., Miyoshi, T. (1991) Patterned crystal growth of GaAs using laser scanning with atomic layer epitaxy. Journal of Crystal Growth, 107 (1). 136-140 doi:10.1016/0022-0248(91)90445-b
Yano, Mitsuaki, Yoh, Kanji, Iwawaki, Takanori, Iwai, Yoshio, Inoue, Masataka (1991) Structural stability of ultrathin InAs/GaAs quantum wells grown by migration enhanced epitaxy. Journal of Crystal Growth, 111 (1). 397-401 doi:10.1016/0022-0248(91)91008-x
Kobayashi, N., Yamauchi, Y., Horikoshi, Y. (1991) In-situ optical monitoring of pyrolysis process on substrate surface in GaAs MOCVD. Journal of Crystal Growth, 115 (1). 353-358 doi:10.1016/0022-0248(91)90767-y
Horikoshi, Yoshiji, Yamaguchi, Hiroshi, Briones, Fernando, Kawashima, Minoru (1990) Growth process of III–V compound semiconductors by migration-enhanced epitaxy. Journal of Crystal Growth, 105 (1). 326-338 doi:10.1016/0022-0248(90)90382-u
Sato, Michio, Kobayashi, Naoki, Horikoshi, Yoshiji (1991) Effect of precracking of organometallics and arsine on growth of GaAs. Journal of Crystal Growth, 115 (1). 221-225 doi:10.1016/0022-0248(91)90742-n
 
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