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Takei, Hideo, Hamada, Tomoji, Hariu, Takashi (1991) Plasma-assisted epitaxy of InAs layers on GaAs. Journal of Crystal Growth, 115 (1). 309-312 doi:10.1016/0022-0248(91)90759-x

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Reference TypeJournal (article/letter/editorial)
TitlePlasma-assisted epitaxy of InAs layers on GaAs
JournalJournal of Crystal Growth
AuthorsTakei, HideoAuthor
Hamada, TomojiAuthor
Hariu, TakashiAuthor
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90759-xSearch in ResearchGate
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Mindat Ref. ID2803907Long-form Identifiermindat:1:5:2803907:3
GUID0
Full ReferenceTakei, Hideo, Hamada, Tomoji, Hariu, Takashi (1991) Plasma-assisted epitaxy of InAs layers on GaAs. Journal of Crystal Growth, 115 (1). 309-312 doi:10.1016/0022-0248(91)90759-x
Plain TextTakei, Hideo, Hamada, Tomoji, Hariu, Takashi (1991) Plasma-assisted epitaxy of InAs layers on GaAs. Journal of Crystal Growth, 115 (1). 309-312 doi:10.1016/0022-0248(91)90759-x
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

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Yamauchi, Satoshi, Hariu, Takashi, Ono, Shoichi (1991) Effect of enhanced reactivity in plasma-assisted epitaxial growth of ZnSe. Journal of Crystal Growth, 115 (1). 660-663 doi:10.1016/0022-0248(91)90822-m
Matsumoto, Takashi, Kato, Takamasa, Ishihara, Eiji (1991) Interface characterization of heteroepitaxial ZnSe layers on GaAs substrates by cathodoluminescence. Journal of Crystal Growth, 115 (1). 674-678 doi:10.1016/0022-0248(91)90825-p
Sudersena Rao, T., Horikoshi, Y. (1991) Growth of (GaAs)1−x(Si2)x metastable alloys using migration-enhanced epitaxy. Journal of Crystal Growth, 115 (1). 328-332 doi:10.1016/0022-0248(91)90763-u
Hamada, Tomoji, Hariu, Takashi, Ono, Shoichi (1993) Plasma-Assisted Epitaxial Growth of P-Type ZnSe in Nitrogen-Based Plasma. Japanese Journal of Applied Physics, 32. 674-677 doi:10.1143/jjap.32.674
Ando, Seigo, Chang, Shi Shya, Fukui, Takashi (1991) Selective epitaxy of GaAs/AlGaAs on (111) B substrates by MOCVD and applications to nanometer structures. Journal of Crystal Growth, 115 (1). 69-73 doi:10.1016/0022-0248(91)90714-g
Kasuga, Masanobu, Futami, Hiroyuki, Iba, Yoshihiro (1991) Vapor phase epitaxy of CdTe on sapphire and GaAs. Journal of Crystal Growth, 115 (1). 711-717 doi:10.1016/0022-0248(91)90832-p
Fukui, Takashi, Saito, Hisao (1991) Step-flow growth and fractional-layer superlattices on GaAs vicinal surfaces by MOCVD. Journal of Crystal Growth, 115 (1). 61-64 doi:10.1016/0022-0248(91)90712-e
Stringfellow, G.B. (1991) Fundamental aspects of vapor growth and epitaxy. Journal of Crystal Growth, 115 (1). 1-11 doi:10.1016/0022-0248(91)90706-b
Yokoyama, Haruki, Shinohara, Masanori, Inoue, Naohisa (1991) Atomic layer epitaxy of GaAs using N2 carrier gas. Journal of Crystal Growth, 115 (1). 89-93 doi:10.1016/0022-0248(91)90718-k
Fukui, Takashi (1988) Growth and characterization of InAs/GaAs monolayer structures. Journal of Crystal Growth, 93 (1). 301-306 doi:10.1016/0022-0248(88)90543-x
Yano, Mitsuaki, Yoh, Kanji, Iwawaki, Takanori, Iwai, Yoshio, Inoue, Masataka (1991) Structural stability of ultrathin InAs/GaAs quantum wells grown by migration enhanced epitaxy. Journal of Crystal Growth, 111 (1). 397-401 doi:10.1016/0022-0248(91)91008-x
 
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