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Kato, Kiyoko, Kusunoki, Toshihiro, Takenaka, Chisato, Tanahashi, Toshiyuki, Nakajima, Kazuo (1991) Reduction of dislocations in InGaAs layer on GaAs using epitaxial lateral overgrowth. Journal of Crystal Growth, 115 (1). 174-179 doi:10.1016/0022-0248(91)90734-m

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Reference TypeJournal (article/letter/editorial)
TitleReduction of dislocations in InGaAs layer on GaAs using epitaxial lateral overgrowth
JournalJournal of Crystal Growth
AuthorsKato, KiyokoAuthor
Kusunoki, ToshihiroAuthor
Takenaka, ChisatoAuthor
Tanahashi, ToshiyukiAuthor
Nakajima, KazuoAuthor
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90734-mSearch in ResearchGate
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Mindat Ref. ID2803757Long-form Identifiermindat:1:5:2803757:0
GUID0
Full ReferenceKato, Kiyoko, Kusunoki, Toshihiro, Takenaka, Chisato, Tanahashi, Toshiyuki, Nakajima, Kazuo (1991) Reduction of dislocations in InGaAs layer on GaAs using epitaxial lateral overgrowth. Journal of Crystal Growth, 115 (1). 174-179 doi:10.1016/0022-0248(91)90734-m
Plain TextKato, Kiyoko, Kusunoki, Toshihiro, Takenaka, Chisato, Tanahashi, Toshiyuki, Nakajima, Kazuo (1991) Reduction of dislocations in InGaAs layer on GaAs using epitaxial lateral overgrowth. Journal of Crystal Growth, 115 (1). 174-179 doi:10.1016/0022-0248(91)90734-m
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

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Kusunoki, Toshihiro, Takenaka, Chisato, Nakajima, Kazuo (1991) LEC growth of InGaAs bulk crystal fed with a GaAs source. Journal of Crystal Growth, 112 (1). 33-38 doi:10.1016/0022-0248(91)90909-o
Kusunoki, Toshihiro, Takenaka, Chisato, Nakajima, Kazuo (1991) Growth of ternary In0.14Ga0.86As bulk crystal with uniform composition at constant temperature through GaAs supply. Journal of Crystal Growth, 115 (1). 723-727 doi:10.1016/0022-0248(91)90834-r
Takenaka, Chisato, Kusunoki, Toshihiro, Nakajima, Kazuo (1991) Solute transport mechanism during liquid phase epitaxial (LPE) growth with an applied current. Journal of Crystal Growth, 114 (3). 293-298 doi:10.1016/0022-0248(91)90044-6
Nakajima, Kazuo, Kusunoki, Toshihiro, Takenaka, Chisato (1991) Growth of ternary InxGa1−xAs bulk crystals with a uniform composition through supply of GaAs. Journal of Crystal Growth, 113 (3). 485-490 doi:10.1016/0022-0248(91)90083-h
Anayama, Chikashi, Tanahashi, Toshiyuki, Nakajima, Kazuo (1991) Selective embedded growth of GaAs by MOVPE. Journal of Crystal Growth, 115 (1). 65-68 doi:10.1016/0022-0248(91)90713-f
Takenaka, Chisato, Nakajima, Kazuo (1991) Effect of electric current on the LPE growth of InP. Journal of Crystal Growth, 108 (3). 519-524 doi:10.1016/0022-0248(91)90229-x
Kinoshita, S., Suzuki, Y., Nishinaga, T. (1991) Epitaxial lateral overgrowth of Si on non-planar substrate. Journal of Crystal Growth, 115 (1). 561-566 doi:10.1016/0022-0248(91)90805-f
Domen, Kay, Sugiura, Katsumi, Anayama, Chikashi, Kondo, Makoto, Sugawara, Mitsuru, Tanahashi, Toshiyuki, Nakajima, Kazuo (1991) Study on radiative efficiency in AlGaInP/GaInP double-heterostructures: influence of deep level in cladding layers. Journal of Crystal Growth, 115 (1). 529-532 doi:10.1016/0022-0248(91)90799-b
Kondo, Makoto, Domen, Kay, Anayama, Chikashi, Tanahashi, Toshiyuki, Nakajima, Kazuo (1991) MOVPE growth and optical properties of AlGaInP/GaInP strained single quantum well structures. Journal of Crystal Growth, 107 (1). 578-582 doi:10.1016/0022-0248(91)90524-9
Nakajima, Kazuo, Kusunoki, Toshihiro (1996) Constant temperature LEC growth of InGaAs ternary bulk crystals using the double crucible method. Journal of Crystal Growth, 169 (2). 217-222 doi:10.1016/s0022-0248(96)00379-x
Takenaka, Chisato, Fujii, Takuya, Kuramata, Akito, Yamazaki, Susumu, Nakajima, Kazuo (1988) Design of the optimum reactor chamber for uniform InP epilayer thickness profiles grown by movpe. Journal of Crystal Growth, 91 (1). 173-179 doi:10.1016/0022-0248(88)90384-3
 
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