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Nakajima, Kazuo, Kusunoki, Toshihiro, Takenaka, Chisato (1991) Growth of ternary InxGa1−xAs bulk crystals with a uniform composition through supply of GaAs. Journal of Crystal Growth, 113 (3). 485-490 doi:10.1016/0022-0248(91)90083-h

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of ternary InxGa1−xAs bulk crystals with a uniform composition through supply of GaAs
JournalJournal of Crystal Growth
AuthorsNakajima, KazuoAuthor
Kusunoki, ToshihiroAuthor
Takenaka, ChisatoAuthor
Year1991 (September)Volume113
Issue3
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90083-hSearch in ResearchGate
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Mindat Ref. ID2802804Long-form Identifiermindat:1:5:2802804:0
GUID0
Full ReferenceNakajima, Kazuo, Kusunoki, Toshihiro, Takenaka, Chisato (1991) Growth of ternary InxGa1−xAs bulk crystals with a uniform composition through supply of GaAs. Journal of Crystal Growth, 113 (3). 485-490 doi:10.1016/0022-0248(91)90083-h
Plain TextNakajima, Kazuo, Kusunoki, Toshihiro, Takenaka, Chisato (1991) Growth of ternary InxGa1−xAs bulk crystals with a uniform composition through supply of GaAs. Journal of Crystal Growth, 113 (3). 485-490 doi:10.1016/0022-0248(91)90083-h
In(1991, September) Journal of Crystal Growth Vol. 113 (3) Elsevier BV

See Also

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Kusunoki, Toshihiro, Takenaka, Chisato, Nakajima, Kazuo (1991) Growth of ternary In0.14Ga0.86As bulk crystal with uniform composition at constant temperature through GaAs supply. Journal of Crystal Growth, 115 (1). 723-727 doi:10.1016/0022-0248(91)90834-r
Kusunoki, Toshihiro, Takenaka, Chisato, Nakajima, Kazuo (1991) LEC growth of InGaAs bulk crystal fed with a GaAs source. Journal of Crystal Growth, 112 (1). 33-38 doi:10.1016/0022-0248(91)90909-o
Takenaka, Chisato, Kusunoki, Toshihiro, Nakajima, Kazuo (1991) Solute transport mechanism during liquid phase epitaxial (LPE) growth with an applied current. Journal of Crystal Growth, 114 (3). 293-298 doi:10.1016/0022-0248(91)90044-6
Kato, Kiyoko, Kusunoki, Toshihiro, Takenaka, Chisato, Tanahashi, Toshiyuki, Nakajima, Kazuo (1991) Reduction of dislocations in InGaAs layer on GaAs using epitaxial lateral overgrowth. Journal of Crystal Growth, 115 (1). 174-179 doi:10.1016/0022-0248(91)90734-m
Nakajima, Kazuo (1991) Calculation of stresses in In0.12Ga0.88As ternary bulk crystals with compositionally graded In1 − xGaxAs layers on GaAs seeds. Journal of Crystal Growth, 113 (3). 477-484 doi:10.1016/0022-0248(91)90082-g
Takenaka, Chisato, Nakajima, Kazuo (1991) Effect of electric current on the LPE growth of InP. Journal of Crystal Growth, 108 (3). 519-524 doi:10.1016/0022-0248(91)90229-x
Nakajima, Kazuo, Kusunoki, Toshihiro, Otsubo, Koji (1997) Bridgman growth of compositionally graded InxGa1 − xAs (x = 0.05−0.30) single crystals for use as seeds for In0.25Ga0.75As crystal growth. Journal of Crystal Growth, 173 (1). 42-50 doi:10.1016/s0022-0248(96)00803-2
Nakajima, Kazuo, Kusunoki, Toshihiro (1996) Constant temperature LEC growth of InGaAs ternary bulk crystals using the double crucible method. Journal of Crystal Growth, 169 (2). 217-222 doi:10.1016/s0022-0248(96)00379-x
Nakajima, Kazuo (1991) Calculation of composition variation of In1−vGavAs ternary crystals for diffusion and electromigration limited growth from a temperature graded solution with source material. Journal of Crystal Growth, 110 (4). 781-794 doi:10.1016/0022-0248(91)90636-j
Takenaka, Chisato, Fujii, Takuya, Kuramata, Akito, Yamazaki, Susumu, Nakajima, Kazuo (1988) Design of the optimum reactor chamber for uniform InP epilayer thickness profiles grown by movpe. Journal of Crystal Growth, 91 (1). 173-179 doi:10.1016/0022-0248(88)90384-3
Anayama, Chikashi, Tanahashi, Toshiyuki, Nakajima, Kazuo (1991) Selective embedded growth of GaAs by MOVPE. Journal of Crystal Growth, 115 (1). 65-68 doi:10.1016/0022-0248(91)90713-f
 
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