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Tatsuyama, C., Terasaki, T., Obata, H., Tanbo, T., Ueba, H. (1991) Effect of the growth temperature on the RHEED pattern of thin Ge layers on Si(001)−2 × 1 surface. Journal of Crystal Growth, 115 (1). 112-116 doi:10.1016/0022-0248(91)90722-h

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Reference TypeJournal (article/letter/editorial)
TitleEffect of the growth temperature on the RHEED pattern of thin Ge layers on Si(001)−2 × 1 surface
JournalJournal of Crystal Growth
AuthorsTatsuyama, C.Author
Terasaki, T.Author
Obata, H.Author
Tanbo, T.Author
Ueba, H.Author
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90722-hSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID2803683Long-form Identifiermindat:1:5:2803683:6
GUID0
Full ReferenceTatsuyama, C., Terasaki, T., Obata, H., Tanbo, T., Ueba, H. (1991) Effect of the growth temperature on the RHEED pattern of thin Ge layers on Si(001)−2 × 1 surface. Journal of Crystal Growth, 115 (1). 112-116 doi:10.1016/0022-0248(91)90722-h
Plain TextTatsuyama, C., Terasaki, T., Obata, H., Tanbo, T., Ueba, H. (1991) Effect of the growth temperature on the RHEED pattern of thin Ge layers on Si(001)−2 × 1 surface. Journal of Crystal Growth, 115 (1). 112-116 doi:10.1016/0022-0248(91)90722-h
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

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Obata, T., Komeda, K., Nakao, T., Ueba, H., Tatsuyama, C. (1997) The effect of buffer layers on structural quality of Si0.7Ge0.3 layers grown on Si(001) substrates by molecular beam epitaxy. Applied Surface Science, 117. 507-511 doi:10.1016/s0169-4332(97)80133-x
Mori, M., Li, D.M., Yamazaki, M., Tambo, T., Ueba, H., Tatsuyama, C. (1996) Heteroepitaxial growth of InSb on Si(001) surface via Ge buffer layers. Applied Surface Science, 104. 563-569 doi:10.1016/s0169-4332(96)00203-6
Mori, M., Tsubosaki, Y., Tambo, T., Ueba, H., Tatsuyama, C. (1997) Growth of InSb films on a Si(001) substrate with Ge buffer layer. Applied Surface Science, 117. 512-517 doi:10.1016/s0169-4332(97)80134-1
Nakayama, N., Kuramachi, T., Tanbo, T., Ueba, H., Tatsuyama, C. (1991) AES, LEELS and XPS studies on the interface formation between layered semiconductors GaSe and InSe. Surface Science Letters, 244 (1). doi:10.1016/0167-2584(91)90733-8
Asai, M., Ueba, H., Tatsuyama, C. (1985) Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface. Journal of Applied Physics, 58 (7). 2577-2583 doi:10.1063/1.335886
Nakayama, N, Kuramachi, T, Tanbo, T, Ueba, H, Tatsuyama, C (1991) AES, LEELS and XPS studies on the interface formation between layered semiconductors GaSe and InSe. Surface Science, 244 (1). 58-66 doi:10.1016/0039-6028(91)90169-s
Itakura, H., Suzuki, T., Jiang, Z.K., Soga, T., Jimbo, T., Umeno, M. (1991) Effect of InGaAs/InP strained layer superlattice in InP-on-Si. Journal of Crystal Growth, 115 (1). 154-157 doi:10.1016/0022-0248(91)90730-s
Obata, T., Komeda, K., Nakao, T., Ueba, H., Tatsuyama, C. (1997) Structural characterization of Si0.7Ge0.3layers grown on Si(001) substrates by molecular beam epitaxy. Journal of Applied Physics, 81 (1). 199-204 doi:10.1063/1.363841
Johansen, Tom H. (1991) On the inherent stability of the Czochralski crystal growth process. Journal of Crystal Growth, 114 (1). 27-30 doi:10.1016/0022-0248(91)90674-t
Sakamoto, T., Kawamura, T., Nago, S., Hashiguchi, G., Sakamoto, K., Kuniyoshi, K. (1987) RHEED-intensity oscillations of alternating surface reconstructions during Si MBE growth on single-domain Si(001)-2×1 surface. Journal of Crystal Growth, 81 (1). 59-64 doi:10.1016/0022-0248(87)90365-4
Hida, Y., Tamagawa, T., Ueba, H., Tatsuyama, C. (1990) Strain relaxation of Ge films grown on a Si(001)‐2×1 surface by molecular beam epitaxy. Journal of Applied Physics, 67 (12). 7274-7277 doi:10.1063/1.344510
 
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