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Itakura, H., Suzuki, T., Jiang, Z.K., Soga, T., Jimbo, T., Umeno, M. (1991) Effect of InGaAs/InP strained layer superlattice in InP-on-Si. Journal of Crystal Growth, 115 (1). 154-157 doi:10.1016/0022-0248(91)90730-s

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Reference TypeJournal (article/letter/editorial)
TitleEffect of InGaAs/InP strained layer superlattice in InP-on-Si
JournalJournal of Crystal Growth
AuthorsItakura, H.Author
Suzuki, T.Author
Jiang, Z.K.Author
Soga, T.Author
Jimbo, T.Author
Umeno, M.Author
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90730-sSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID2803733Long-form Identifiermindat:1:5:2803733:0
GUID0
Full ReferenceItakura, H., Suzuki, T., Jiang, Z.K., Soga, T., Jimbo, T., Umeno, M. (1991) Effect of InGaAs/InP strained layer superlattice in InP-on-Si. Journal of Crystal Growth, 115 (1). 154-157 doi:10.1016/0022-0248(91)90730-s
Plain TextItakura, H., Suzuki, T., Jiang, Z.K., Soga, T., Jimbo, T., Umeno, M. (1991) Effect of InGaAs/InP strained layer superlattice in InP-on-Si. Journal of Crystal Growth, 115 (1). 154-157 doi:10.1016/0022-0248(91)90730-s
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

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Soga, T., Suzuki, T., Mori, M., Jiang, Z.K., Jimbo, T., Umeno, M. (1993) Electrical properties of GaP on Si grown by metalorganic chemical vapor deposition. Journal of Crystal Growth, 132 (3). 414-418 doi:10.1016/0022-0248(93)90066-6
Suzuki, Takayuki, Soga, Tetsuo, Jimbo, Takashi, Umeno, Masayoshi (1991) Growth mechanism of GaP on Si substrate by MOVPE. Journal of Crystal Growth, 115 (1). 158-163 doi:10.1016/0022-0248(91)90731-j
Ueda, O., Soga, T., Jimbo, T., Umeno, M. (1990) Characterization of MOCVD-grown GaAs/strained layer superlattices/ GaP/Si heterostructures by transmission electron microscopy. Journal of Crystal Growth, 106 (4). 491-497 doi:10.1016/0022-0248(90)90020-l
Sakuma, Y., Ozeki, M., Kodama, K., Ohtsuka, N. (1991) InAs/InP short-period strained-layer superlattices grown by atomic layer epitaxy. Journal of Crystal Growth, 115 (1). 324-327 doi:10.1016/0022-0248(91)90762-t
Soga, T., Suzuki, T., Mori, M., Jimbo, T., Umeno, M. (1993) The effects of the growth parameters on the initial stage of epitaxial growth of GaP on Si by metalorganic chemical vapor deposition. Journal of Crystal Growth, 132 (1). 134-140 doi:10.1016/0022-0248(93)90256-v
Soga, Tetsuo, George, Thomas, Jimbo, Takashi, Umeno, Mayayoshi (1991) Nucleation mechanisms for compound semiconductors grown on Si by MOCVD. Journal of Crystal Growth, 115 (1). 418-422 doi:10.1016/0022-0248(91)90778-4
Soga, T., Jiang, Z.K., Suzuki, T., Jimbo, T., Umeno, M. (1992) TEM characterization of the GaP/Si interface grown by MOCVD. Applied Surface Science, 60. 380-384 doi:10.1016/0169-4332(92)90447-6
Soga, T., Kohama, Y., Uchida, K., Tajima, M., Jimbo, T., Umeno, M. (1988) MOCVD growth and characterization of GaAs and GaP grown on Si substrates. Journal of Crystal Growth, 93 (1). 499-503 doi:10.1016/0022-0248(88)90573-8
Uchida, H., Soga, T., Nishikawa, H., Jimbo, T., Umeno, M. (1995) Reduction of dislocation density by thermal annealing for GaAs/GaSb/Si heterostructure. Journal of Crystal Growth, 150. 681-684 doi:10.1016/0022-0248(95)80295-n
Ueda, O., Nakata, Y., Nakamura, T., Fujii, T. (1991) TEM investigation of CuAu-I type ordered structures in MBE-grown InGaAs crystals on (110) InP substrates. Journal of Crystal Growth, 115 (1). 375-380 doi:10.1016/0022-0248(91)90771-v
Saravanan, S., Hayashi, Y., Soga, T., Jimbo, T., Umeno, M., Sato, N., Yonehara, T. (2002) Growth of GaAs epitaxial layers on Si substrate with porous Si intermediate layer by chemical beam epitaxy. Journal of Crystal Growth, 237. 1450-1454 doi:10.1016/s0022-0248(01)02287-4
 
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