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Isamu, Akasaki (1991) Conference chairperson's preface. Journal of Crystal Growth, 115 (1). doi:10.1016/0022-0248(91)90704-9

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Reference TypeJournal (article/letter/editorial)
TitleConference chairperson's preface
JournalJournal of Crystal Growth
AuthorsIsamu, AkasakiAuthor
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90704-9Search in ResearchGate
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Mindat Ref. ID2803580Long-form Identifiermindat:1:5:2803580:0
GUID0
Full ReferenceIsamu, Akasaki (1991) Conference chairperson's preface. Journal of Crystal Growth, 115 (1). doi:10.1016/0022-0248(91)90704-9
Plain TextIsamu, Akasaki (1991) Conference chairperson's preface. Journal of Crystal Growth, 115 (1). doi:10.1016/0022-0248(91)90704-9
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

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Yanagase, Masashi, Tanaka, Shigeyasu, Hiramatsu, Kazumasa, Akasaki, Isamu (1991) Growth of InGaP epitaxial layers by liquid phase electro-epitaxy. Journal of Crystal Growth, 115 (1). 304-308 doi:10.1016/0022-0248(91)90758-w
(1991) Editors' preface. Journal of Crystal Growth, 115 (1). doi:10.1016/0022-0248(91)90705-a
Takeuchi, Tetsuya, Amano, Hiroshi, Hiramatsu, Kazumasa, Sawaki, Nobuhiko, Akasaki, Isamu (1991) Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer. Journal of Crystal Growth, 115 (1). 634-638 doi:10.1016/0022-0248(91)90817-o
Murakami, Hiroshi, Asahi, Tsunemori, Amano, Hiroshi, Hiramatsu, Kazumasa, Sawaki, Nobuhiko, Akasaki, Isamu (1991) Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 115 (1). 648-651 doi:10.1016/0022-0248(91)90820-u
(1991) Preface from the conference co-chairmen. Journal of Crystal Growth, 109 (1). doi:10.1016/0022-0248(91)90148-x
(1991) Preface. Journal of Crystal Growth, 107 (1). doi:10.1016/0022-0248(91)90427-7
(1991) Preface. Journal of Crystal Growth, 111 (1). doi:10.1016/0022-0248(91)90937-z
Hiramatsu, Kazumasa, Amano, Hiroshi, Akasaki, Isamu, Kato, Hisaki, Koide, Norikatsu, Manabe, Katsuhide (1991) MOVPE growth of GaN on a misoriented sapphire substrate. Journal of Crystal Growth, 107 (1). 509-512 doi:10.1016/0022-0248(91)90512-4
(1991) Editorial Board. Journal of Crystal Growth, 115 (1). doi:10.1016/0022-0248(91)90703-8
Fujita, Shigeo, Nishino, Taneo, Taguchi, Tsunemasa (1992) Editors' preface. Journal of Crystal Growth, 117 (1). doi:10.1016/0022-0248(92)90704-m
(1991) Preface from the program co-chairmen. Journal of Crystal Growth, 109 (1). doi:10.1016/0022-0248(91)90149-y
 
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