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EPHRATH, L. M. (1979) ChemInform Abstract: SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH FLUOROMETHANE-MOLECULAR HYDROGEN. Chemischer Informationsdienst, 10 (49) doi:10.1002/chin.197949012

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Reference TypeJournal (article/letter/editorial)
TitleChemInform Abstract: SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH FLUOROMETHANE-MOLECULAR HYDROGEN
JournalChemischer Informationsdienst
AuthorsEPHRATH, L. M.Author
Year1979 (December 4)Volume10
Issue49
PublisherWiley
DOIdoi:10.1002/chin.197949012Search in ResearchGate
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Mindat Ref. ID14802441Long-form Identifiermindat:1:5:14802441:2
GUID0
Full ReferenceEPHRATH, L. M. (1979) ChemInform Abstract: SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH FLUOROMETHANE-MOLECULAR HYDROGEN. Chemischer Informationsdienst, 10 (49) doi:10.1002/chin.197949012
Plain TextEPHRATH, L. M. (1979) ChemInform Abstract: SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH FLUOROMETHANE-MOLECULAR HYDROGEN. Chemischer Informationsdienst, 10 (49) doi:10.1002/chin.197949012
In(1979, December) Chemischer Informationsdienst Vol. 10 (49) Wiley

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Ephrath, L. M. (1979) Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF[sub 4]-H[sub 2]. Journal of the Electrochemical Society, 126. 1419pp. doi:10.1149/1.2129291
SMOLINSKY, G., MAYER, T. M., TRUESDALE, E. A. (1982) ChemInform Abstract: PLASMA ETCHING OF SILICON AND SILICON DIOXIDE WITH HYDROGEN FLUORIDE MIXTURES. Chemischer Informationsdienst, 13 (49) doi:10.1002/chin.198249340
MADER, L., HOEPFNER, J. (1977) ChemInform Abstract: ION BEAM ETCHING OF SILICON DIOXIDE ON SILICON. Chemischer Informationsdienst, 8 (11) doi:10.1002/chin.197711008
CHOW, T. P., FANELLI, G. M. (1985) ChemInform Abstract: REACTIVE ION ETCHING OF SILICON AND SILICIDES IN SULFUR HEXAFLUORIDE OR TRIFLUOROAMMONIA/CARBON TETRACHLORIDE OR HYDROGEN CHLORIDE MIXTURES. Chemischer Informationsdienst, 16 (49) doi:10.1002/chin.198549334
SCHAIBLE, P. M., SCHWARTZ, G. C. (1985) ChemInform Abstract: SELECTIVE REACTIVE ION ETCHING OF TITANIUM-TUNGSTEN (TIW) Chemischer Informationsdienst, 16 (37) doi:10.1002/chin.198537339
DiMaria, D. J., Ephrath, L. M., Young, D. R. (1979) Radiation damage in silicon dioxide films exposed to reactive ion etching. Journal of Applied Physics, 50 (6). 4015-4021 doi:10.1063/1.326481
SCHWARTZ, G. C., ROTHMAN, L. B., SCHOPEN, T. J. (1979) ChemInform Abstract: COMPETITIVE MECHANISMS IN REACTIVE ION ETCHING IN A CARBON TETRAFLUORIDE PLASMA. Chemischer Informationsdienst, 10 (27) doi:10.1002/chin.197927007
SHIVARAMAN, M. S., SVENSSON, C. M. (1976) ChemInform Abstract: CONTROL OF PALLADIUM ADHERENCE TO SILICON DIOXIDE FOR PHOTOLITHOGRAPHIC ETCHING. Chemischer Informationsdienst, 7 (50) doi:10.1002/chin.197650008
BARYCKA, I., TETERYCZ, H. (1980) ChemInform Abstract: SILICON DIOXIDE AS MASKING FILM IN ALKALINE ETCHING. Chemischer Informationsdienst, 11 (25) doi:10.1002/chin.198025003
SCHWARTZ, B., ROBBINS, H. (1977) ChemInform Abstract: CHEMICAL ETCHING OF SILICON. IV. ETCHING TECHNOLOGY. Chemischer Informationsdienst, 8 (11) doi:10.1002/chin.197711010
CHEN, M., MINKIEWICZ, V. J., LEE, K. (1980) ChemInform Abstract: ETCHING SILICON WITH FLUORINE GAS. Chemischer Informationsdienst, 11 (12) doi:10.1002/chin.198012006
 
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