Chapman, R. E. (1977) Redeposition: a factor in ion-beam etching topography. Journal of Materials Science, 12. 1125-1133 doi:10.1007/bf02426849

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Reference Type	Journal (article/letter/editorial)
Title	Redeposition: a factor in ion-beam etching topography
Journal	Journal of Materials Science
Authors	Chapman, R. E.		Author
Year	1977 (June)	Volume	12
Publisher	Springer Science and Business Media LLC
DOI	doi:10.1007/bf02426849Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	9983258	Long-form Identifier	mindat:1:5:9983258:6
GUID	0
Full Reference	Chapman, R. E. (1977) Redeposition: a factor in ion-beam etching topography. Journal of Materials Science, 12. 1125-1133 doi:10.1007/bf02426849
Plain Text	Chapman, R. E. (1977) Redeposition: a factor in ion-beam etching topography. Journal of Materials Science, 12. 1125-1133 doi:10.1007/bf02426849
In	(n.d.) Journal of Materials Science Vol. 12. Springer Science and Business Media LLC

	*Dhariwal, R. S., Fitch, R. K. (1977) In situ ion etching in a scanning electron microscope. Journal of Materials Science, 12. 1225-1232 doi:10.1007/bf02426861*
	Chappell, R. A., Stoddart, C. T. H. (1977) The determination of surface composition profiles in glass by Auger electron spectroscopy and ion etching. Journal of Materials Science, 12. 2001-2010 doi:10.1007/bf00561972
	*Tagg, M. A., Smith, R., Walls, J. M. (1986) Sample rocking and rotation in ion beam etching. Journal of Materials Science, 21. 123-130 doi:10.1007/bf01144709*
	*Barnes, P., Fonseka, G. M., Ghose, A., Moore, N. T. (1979) Ion beam etching in the study of cementitious materials. Journal of Materials Science, 14. 2831-2836 doi:10.1007/bf00611462*
	*Edelson, B. I., Pollack, L. (1977) Satellite Communications. Science, 195 (4283). 1125-1133 doi:10.1126/science.195.4283.1125*
	*Venables, M. A., Makh, S. S. (1987) Polishing of lithium niobate by ion-beam etching. Journal of Materials Science Letters, 6 (11) 1254-1256 doi:10.1007/bf01794579*
	*Griffiths, D. P., Bradley, S. H. (1977) Plasma etching as a diagnostic technique in silicon surface studies. Journal of Materials Science, 12. 1019-1027 doi:10.1007/bf00540986*
	*Smith, R., Makh, S. S., Walls, J. M. (1983) Surface morphology during ion etching The influence of redeposition. Philosophical Magazine A, 47 (4). 453-481 doi:10.1080/01418618308245240*
	*Mcgeehin, P., Hooper, A. (1977) Fast ion conduction materials. Journal of Materials Science, 12. 1-27 doi:10.1007/bf00738467*
	*Steinbrüchel, Ch. (1986) Reactive ion beam etching with chlorinated gases: Beam characterization and etching of aluminum. Journal of Applied Physics, 59 (12). 4151-4157 doi:10.1063/1.336674*
	*Riedel, Nicholas A., Williams, John D., Popat, Ketul C. (2011) Ion beam etching titanium for enhanced osteoblast response. Journal of Materials Science, 46. 6087-6095 doi:10.1007/s10853-011-5571-z*

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Chapman, R. E. (1977) Redeposition: a factor in ion-beam etching topography. Journal of Materials Science, 12. 1125-1133 doi:10.1007/bf02426849

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