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Antunes, V.G., Figueroa, C.A., Alvarez, F. (2018) A comprehensive study of the TiN/Si interface by X-ray photoelectron spectroscopy. Applied Surface Science, 448. 502-509 doi:10.1016/j.apsusc.2018.04.005

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Reference TypeJournal (article/letter/editorial)
TitleA comprehensive study of the TiN/Si interface by X-ray photoelectron spectroscopy
JournalApplied Surface Science
AuthorsAntunes, V.G.Author
Figueroa, C.A.Author
Alvarez, F.Author
Year2018 (August)Volume448
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2018.04.005Search in ResearchGate
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Mindat Ref. ID9934560Long-form Identifiermindat:1:5:9934560:0
GUID0
Full ReferenceAntunes, V.G., Figueroa, C.A., Alvarez, F. (2018) A comprehensive study of the TiN/Si interface by X-ray photoelectron spectroscopy. Applied Surface Science, 448. 502-509 doi:10.1016/j.apsusc.2018.04.005
Plain TextAntunes, V.G., Figueroa, C.A., Alvarez, F. (2018) A comprehensive study of the TiN/Si interface by X-ray photoelectron spectroscopy. Applied Surface Science, 448. 502-509 doi:10.1016/j.apsusc.2018.04.005
In(n.d.) Applied Surface Science Vol. 448. Elsevier BV

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