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Wang, Ke, Huang, Ya, Chen, Ruofei, Xu, Zhan (2016) Structural and electrical properties of heterojunction devices formed by spinning TIPS Pentacene thin films on n-Si substrates. Applied Surface Science, 388. 376-380 doi:10.1016/j.apsusc.2015.12.147

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Reference TypeJournal (article/letter/editorial)
TitleStructural and electrical properties of heterojunction devices formed by spinning TIPS Pentacene thin films on n-Si substrates
JournalApplied Surface Science
AuthorsWang, KeAuthor
Huang, YaAuthor
Chen, RuofeiAuthor
Xu, ZhanAuthor
Year2016 (December)Volume388
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2015.12.147Search in ResearchGate
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Mindat Ref. ID9929005Long-form Identifiermindat:1:5:9929005:4
GUID0
Full ReferenceWang, Ke, Huang, Ya, Chen, Ruofei, Xu, Zhan (2016) Structural and electrical properties of heterojunction devices formed by spinning TIPS Pentacene thin films on n-Si substrates. Applied Surface Science, 388. 376-380 doi:10.1016/j.apsusc.2015.12.147
Plain TextWang, Ke, Huang, Ya, Chen, Ruofei, Xu, Zhan (2016) Structural and electrical properties of heterojunction devices formed by spinning TIPS Pentacene thin films on n-Si substrates. Applied Surface Science, 388. 376-380 doi:10.1016/j.apsusc.2015.12.147
In(n.d.) Applied Surface Science Vol. 388. Elsevier BV

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