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Son, Jong Yeog, Shin, Yun-Sok, Shin, Young-Han (2011) Nanoscale resistive random access memory consisting of a NiO nanodot and Au nanowires formed by dip-pen nanolithography. Applied Surface Science, 257. 9885-9887 doi:10.1016/j.apsusc.2011.06.076

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Reference TypeJournal (article/letter/editorial)
TitleNanoscale resistive random access memory consisting of a NiO nanodot and Au nanowires formed by dip-pen nanolithography
JournalApplied Surface Science
AuthorsSon, Jong YeogAuthor
Shin, Yun-SokAuthor
Shin, Young-HanAuthor
Year2011 (September)Volume257
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2011.06.076Search in ResearchGate
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Mindat Ref. ID9916630Long-form Identifiermindat:1:5:9916630:4
GUID0
Full ReferenceSon, Jong Yeog, Shin, Yun-Sok, Shin, Young-Han (2011) Nanoscale resistive random access memory consisting of a NiO nanodot and Au nanowires formed by dip-pen nanolithography. Applied Surface Science, 257. 9885-9887 doi:10.1016/j.apsusc.2011.06.076
Plain TextSon, Jong Yeog, Shin, Yun-Sok, Shin, Young-Han (2011) Nanoscale resistive random access memory consisting of a NiO nanodot and Au nanowires formed by dip-pen nanolithography. Applied Surface Science, 257. 9885-9887 doi:10.1016/j.apsusc.2011.06.076
In(n.d.) Applied Surface Science Vol. 257. Elsevier BV

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Shin, Yun-Sok, Son, Jong Yeog, Jo, Moon-Ho, Shin, Young-Han, Jang, Hyun Myung (2011) High-Mobility Graphene Nanoribbons Prepared Using Polystyrene Dip-Pen Nanolithography. Journal Of The American Chemical Society, 133 (15) 5623-5625 doi:10.1021/ja108464s
Shin, Hyun Wook, Shin, Young-Han, Son, Jong Yeog (2021) Resistive switching characteristics of epitaxial NiO thin films affected by lattice strains and external forces. Applied Surface Science, 566. 150685pp. doi:10.1016/j.apsusc.2021.150685
Kim, Woo-Hee, Son, Jong Yeog (2014) Resistive switching characteristics of ferroelectric BiFeO3 nanodot prepared by dip-pen nanolithography. Materials Letters, 121. 122-125 doi:10.1016/j.matlet.2014.01.157
Shin, Hyun Wook, Son, Jong Yeog (2019) Resistive switching characteristics of graphene/NiO/highly ordered pyrolytic graphite resistive random access memory capacitors. Journal of Alloys and Compounds, 772. 900-904 doi:10.1016/j.jallcom.2018.09.181
Ahn, Yoonho, Shin, Hyun Wook, Lee, Tae Hoon, Kim, Woo-Hee, Son, Jong Yeog (2018) Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films. Nanoscale, 10. 13443-13448 doi:10.1039/c8nr02986e
Shin, Hyun Wook, Son, Jong Yeog (2023) Ferroelectric domain wall current corresponding to ferroelectric domain structures of BaTiO3 nanodots fabricated by dip-pen nanolithography. Ceramics International, 49 (2) 2786-2791 doi:10.1016/j.ceramint.2022.09.260
Son, Jong Yeog, Shin, Yun-Sok, Shin, Young-Han (2012) Multiferroic Properties of Self-Aligned BiMnO3 Nanosquares. Journal of the American Ceramic Society, 95 (8). 2474-2477 doi:10.1111/j.1551-2916.2012.05308.x
Kim, Woo-Hee, Park, Chang Soo, Son, Jong Yeog (2014) Nanoscale resistive switching memory device composed of NiO nanodot and graphene nanoribbon nanogap electrodes. Carbon, 79. 388-392 doi:10.1016/j.carbon.2014.07.081
Son, Jong Yeog, Shin, Yun-Sok, Song, Seung-Woo, Shin, Young-Han, Jang, Hyun Myung (2011) Intaglio Nanotemplates Based on Atomic Force Microscopy for Ferroelectric Nanodots. The Journal of Physical Chemistry C, 115 (29). 14077-14080 doi:10.1021/jp2029938
Son, Jong Yeog, Shin, Young-Han, Ryu, Sangwoo, Kim, Hyungjun, Jang, Hyun M. (2009) Dip-Pen Lithography of Ferroelectric PbTiO3Nanodots. Journal Of The American Chemical Society, 131 (41) 14676-14678 doi:10.1021/ja906871b
Ahn, Yoonho, Son, Jong Yeog (2021) Resistive random access memory characteristics of NiO thin films with an oxygen-deficient NiO0.95 layer. Ceramics International, 47 (7) 9342-9346 doi:10.1016/j.ceramint.2020.12.064
 
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