| Reference Type | Journal (article/letter/editorial) |
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| Title | Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN |
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| Journal | Applied Surface Science |
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| Authors | Hartman, J.D. | Author |
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| Naniwae, K. | Author |
| Petrich, C. | Author |
| Nemanich, R.J. | Author |
| Davis, R.F. | Author |
| Year | 2005 (April) | Volume | 242 |
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| Publisher | Elsevier BV |
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| DOI | doi:10.1016/j.apsusc.2004.09.021Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 9907153 | Long-form Identifier | mindat:1:5:9907153:8 |
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|
| GUID | 0 |
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| Full Reference | Hartman, J.D., Naniwae, K., Petrich, C., Nemanich, R.J., Davis, R.F. (2005) Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN. Applied Surface Science, 242. 428-436 doi:10.1016/j.apsusc.2004.09.021 |
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| Plain Text | Hartman, J.D., Naniwae, K., Petrich, C., Nemanich, R.J., Davis, R.F. (2005) Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN. Applied Surface Science, 242. 428-436 doi:10.1016/j.apsusc.2004.09.021 |
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| In | (n.d.) Applied Surface Science Vol. 242. Elsevier BV |
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