Sameshima, J., Maeda, R., Yamada, K., Karen, A., Yamada, S. (2004) Depth profiles of boron and nitrogen in SiON films by backside SIMS. Applied Surface Science, 231. 614-617 doi:10.1016/j.apsusc.2004.03.123
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Depth profiles of boron and nitrogen in SiON films by backside SIMS | ||
Journal | Applied Surface Science | ||
Authors | Sameshima, J. | Author | |
Maeda, R. | Author | ||
Yamada, K. | Author | ||
Karen, A. | Author | ||
Yamada, S. | Author | ||
Year | 2004 (June) | Volume | 231 |
Page(s) | 614-617 | ||
Publisher | Elsevier BV | ||
DOI | doi:10.1016/j.apsusc.2004.03.123Search in ResearchGate | ||
Mindat Ref. ID | 9906282 | Long-form Identifier | mindat:1:5:9906282:2 |
GUID | b3883ff6-ecd1-4f9f-b74e-c0acf4ea014c | ||
Full Reference | Sameshima, J., Maeda, R., Yamada, K., Karen, A., Yamada, S. (2004) Depth profiles of boron and nitrogen in SiON films by backside SIMS. Applied Surface Science, 231. 614-617 doi:10.1016/j.apsusc.2004.03.123 | ||
Plain Text | Sameshima, J., Maeda, R., Yamada, K., Karen, A., Yamada, S. (2004) Depth profiles of boron and nitrogen in SiON films by backside SIMS. Applied Surface Science, 231. 614-617 doi:10.1016/j.apsusc.2004.03.123 | ||
In | (n.d.) Applied Surface Science Vol. 231. Elsevier BV |
References Listed
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Not Yet Imported: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures - journal-article : 10.1116/1.1592808 If you would like this item imported into the Digital Library, please contact us quoting Journal ID | |
Not Yet Imported: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures - journal-article : 10.1116/1.1424281 If you would like this item imported into the Digital Library, please contact us quoting Journal ID | |
Not Yet Imported: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures - journal-article : 10.1116/1.1535925 If you would like this item imported into the Digital Library, please contact us quoting Journal ID | |
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