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Noda, Yasutoshi, Kitagawa, Hiroyuki, Kado, Naomi, Ueda, Yu, Kanayama, Nobuyuki (2003) Preparation of SiC-Based Thermoelectric Device by Spark Plasma Sintering. Materials Science Forum, 423. 355-358 doi:10.4028/www.scientific.net/msf.423-425.355

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Reference TypeJournal (article/letter/editorial)
TitlePreparation of SiC-Based Thermoelectric Device by Spark Plasma Sintering
JournalMaterials Science Forum
AuthorsNoda, YasutoshiAuthor
Kitagawa, HiroyukiAuthor
Kado, NaomiAuthor
Ueda, YuAuthor
Kanayama, NobuyukiAuthor
Year2003 (May)Volume423
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.423-425.355Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9853343Long-form Identifiermindat:1:5:9853343:9
GUID0
Full ReferenceNoda, Yasutoshi, Kitagawa, Hiroyuki, Kado, Naomi, Ueda, Yu, Kanayama, Nobuyuki (2003) Preparation of SiC-Based Thermoelectric Device by Spark Plasma Sintering. Materials Science Forum, 423. 355-358 doi:10.4028/www.scientific.net/msf.423-425.355
Plain TextNoda, Yasutoshi, Kitagawa, Hiroyuki, Kado, Naomi, Ueda, Yu, Kanayama, Nobuyuki (2003) Preparation of SiC-Based Thermoelectric Device by Spark Plasma Sintering. Materials Science Forum, 423. 355-358 doi:10.4028/www.scientific.net/msf.423-425.355
In(2003) Materials Science Forum Vol. 423. Trans Tech Publications, Ltd.

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