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Ogino, Shinji, Oikawa, Tadaaki, Ueno, Katsunori (2000) Channel Doped SiC-MOSFETs. Materials Science Forum, 338. 1101-1104 doi:10.4028/www.scientific.net/msf.338-342.1101

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Reference TypeJournal (article/letter/editorial)
TitleChannel Doped SiC-MOSFETs
JournalMaterials Science Forum
AuthorsOgino, ShinjiAuthor
Oikawa, TadaakiAuthor
Ueno, KatsunoriAuthor
Year2000 (May)Volume338
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.338-342.1101Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9849596Long-form Identifiermindat:1:5:9849596:2
GUID0
Full ReferenceOgino, Shinji, Oikawa, Tadaaki, Ueno, Katsunori (2000) Channel Doped SiC-MOSFETs. Materials Science Forum, 338. 1101-1104 doi:10.4028/www.scientific.net/msf.338-342.1101
Plain TextOgino, Shinji, Oikawa, Tadaaki, Ueno, Katsunori (2000) Channel Doped SiC-MOSFETs. Materials Science Forum, 338. 1101-1104 doi:10.4028/www.scientific.net/msf.338-342.1101
In(2000) Materials Science Forum Vol. 338. Trans Tech Publications, Ltd.

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Tsuji, Takashi, Asai, R., Ueno, Katsunori, Ogino, Shinji (2000) Optical Beam Induced Current Analysis of High-Voltage 4H-SiC Schottky Rectifiers. Materials Science Forum, 338. 1195-1198 doi:10.4028/www.scientific.net/msf.338-342.1195
Scozzie, Charles, Lelis, Aivars J., McLean, F. Barry (2000) Mobility in 6H-SiC n-Channel MOSFETs. Materials Science Forum, 338. 1121-1124 doi:10.4028/www.scientific.net/msf.338-342.1121
Yano, Hiroshi, Hirao, Toshio, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Asano, Katsunori, Sugawara, Yoshitaka (2000) Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face. Materials Science Forum, 338. 1105-1108 doi:10.4028/www.scientific.net/msf.338-342.1105
Sugawara, Yoshitaka, Asano, Katsunori, Saito, Ryuichi (2000) 3.6 kV 4H-SiC JBS Diodes with Low RonS. Materials Science Forum, 338. 1183-1186 doi:10.4028/www.scientific.net/msf.338-342.1183
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Agarwal, Anant K., Saks, N.S., Mani, S.S., Hegde, V.S., Sanger, P.A. (2000) Investigation of Lateral RESURF, 6H-SiC MOSFETs. Materials Science Forum, 338. 1307-1310 doi:10.4028/www.scientific.net/msf.338-342.1307
Sugawara, Yoshitaka, Asano, Katsunori, Singh, Ranbir, Palmour, John W. (2000) 6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop. Materials Science Forum, 338. 1371-1374 doi:10.4028/www.scientific.net/msf.338-342.1371
Saks, N.S., Mani, S.S., Agarwal, Anant K., Hegde, V.S. (2000) Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs. Materials Science Forum, 338. 737-740 doi:10.4028/www.scientific.net/msf.338-342.737
Matsunami, Hiroyuki (2000) An Overview of SiC Growth. Materials Science Forum, 338. 125-130 doi:10.4028/www.scientific.net/msf.338-342.125
Wang, Jue, Williams, B.W., Madathil, Shankar E., Desouza, M.M. (2000) Comparison of 5 kV 4H-SiC N-Channel and P-Channel IGBTs. Materials Science Forum, 338. 1411-1414 doi:10.4028/www.scientific.net/msf.338-342.1411
Held, R., Füllmann, M., Niemann, E. (2000) SiC-Power Rectifiers. Materials Science Forum, 338. 1407-1410 doi:10.4028/www.scientific.net/msf.338-342.1407
 
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