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Mourelatos, S., Ralantoson, N., Delavignette, P., Hairie, A., Hairie, F., Hou, M., Paumier, E., Thibault, J., Sutton, A.P. (1993) Free Energy of the Σ = 11 (332) Tilt Grain Boundary in Silicon. Materials Science Forum, 126. 253-256 doi:10.4028/www.scientific.net/msf.126-128.253

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Reference TypeJournal (article/letter/editorial)
TitleFree Energy of the Σ = 11 (332) Tilt Grain Boundary in Silicon
JournalMaterials Science Forum
AuthorsMourelatos, S.Author
Ralantoson, N.Author
Delavignette, P.Author
Hairie, A.Author
Hairie, F.Author
Hou, M.Author
Paumier, E.Author
Thibault, J.Author
Sutton, A.P.Author
Year1993 (January)Volume126
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.126-128.253Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9841290Long-form Identifiermindat:1:5:9841290:5
GUID0
Full ReferenceMourelatos, S., Ralantoson, N., Delavignette, P., Hairie, A., Hairie, F., Hou, M., Paumier, E., Thibault, J., Sutton, A.P. (1993) Free Energy of the Σ = 11 (332) Tilt Grain Boundary in Silicon. Materials Science Forum, 126. 253-256 doi:10.4028/www.scientific.net/msf.126-128.253
Plain TextMourelatos, S., Ralantoson, N., Delavignette, P., Hairie, A., Hairie, F., Hou, M., Paumier, E., Thibault, J., Sutton, A.P. (1993) Free Energy of the Σ = 11 (332) Tilt Grain Boundary in Silicon. Materials Science Forum, 126. 253-256 doi:10.4028/www.scientific.net/msf.126-128.253
In(1993) Materials Science Forum Vol. 126. Trans Tech Publications, Ltd.

See Also

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Ralantoson, N., Hairie, F., Hairie, A., Nouet, Gerard, Paumier, E. (1993) Energy Calculation of the Σ = 5<001> Twist Grain Boundary in Silicon and Germanium. Materials Science Forum, 126. 241-244 doi:10.4028/www.scientific.net/msf.126-128.241
Cheikh, M., Hairie, A., Hairie, F., Nouet, Gerard, Paumier, E. (1993) Energy Calculation of the Σ = 9<001> Tilt Grain Boundary in Silicon Using Keating Potential and Tight-Binding Model. Materials Science Forum, 126. 245-248 doi:10.4028/www.scientific.net/msf.126-128.245
Hou, M., Hairie, A., Lebouvier, B., Paumier, E., Ralantoson, N., Hardouin Duparc, O.B.M., Sutton, A.P. (1996) Direct Free Energy Estimates along a Real Path by Means of Constrained Molecular Dynamics. Materials Science Forum, 207. 249-252 doi:10.4028/www.scientific.net/msf.207-209.249
Elkajbaji, M., Thibault, J. (1993) HREM Study of Copper Precipitation in a Σ=25 Silicon Tilt Grain Boundary. Materials Science Forum, 126. 651-654 doi:10.4028/www.scientific.net/msf.126-128.651
Chen, Jin Ming, Hairie, A., Nouet, Gerard, Paumier, E. (1998) Relative Stability of Two Structures of the Σ=11<011> Tilt Grain Boundary in Silicon and Germanium by the Tight-Binding Method. Materials Science Forum, 294. 227-230 doi:10.4028/www.scientific.net/msf.294-296.227
Lebouvier, B., Hairie, A., Hairie, F., Nouet, Gerard, Paumier, E. (1996) Comparison of Different Empirical Potentials for Energy Calculation of Grain Boundaries in Silicon at OK. Materials Science Forum, 207. 277-280 doi:10.4028/www.scientific.net/msf.207-209.277
Sutton, A. P., Hairie, A., Hairie, F., Lebouvier, B., Nouet, G., Paumier, E., Ralantoson, N. (1997) Methods of minimizing free energies directly. Journal of Phase Equilibria, 18 (6) 544-545 doi:10.1007/bf02665808
Hairie, A., Hairie, F., Lebouvier, B., Paumier, E. (1996) A Direct Method for Density Matrix Calculation: Application to Si Grain Boundaries in the Tight-Binding Scheme. Materials Science Forum, 207. 105-108 doi:10.4028/www.scientific.net/msf.207-209.105
Chen, J., Lebouvier, B., Hairie, A., Nouet, G., Paumier, E. (1998) Potential energy of two structures of Σ = 11〈0 1 1〉 tilt grain boundary in silicon and germanium with empirical potentials and tight-binding methods. Computational Materials Science, 10 (1). 334-338 doi:10.1016/s0927-0256(97)00130-4
Putaux, Jean-Luc, Thibault, J., Jacques, Alain, George, A. (1993) Symmetric (011)Tilt Grain Boundaries in Si and Ge: Interfacial Dislocation Concept. Materials Science Forum, 126. 73-76 doi:10.4028/www.scientific.net/msf.126-128.73
Béré, A., Hairie, A., Nouet, Gerard, Paumier, E. (1998) Calculation of the Energy of Extend Defects in Zinc by the Semi-Empirical Tight-Binding Method. Materials Science Forum, 294. 219-222 doi:10.4028/www.scientific.net/msf.294-296.219
 
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