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Sun, Guodong, Li, Hejun, Fu, Qiangang, Huang, Min, Cao, Wei, Wu, Heng (2009) Finite element simulation of the effects of process parameters on deposition uniformity of chemical-vapor-deposited silicon carbide. Computational Materials Science, 46 (4). 1002-1006 doi:10.1016/j.commatsci.2009.05.005

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Reference TypeJournal (article/letter/editorial)
TitleFinite element simulation of the effects of process parameters on deposition uniformity of chemical-vapor-deposited silicon carbide
JournalComputational Materials Science
AuthorsSun, GuodongAuthor
Li, HejunAuthor
Fu, QiangangAuthor
Huang, MinAuthor
Cao, WeiAuthor
Wu, HengAuthor
Year2009 (October)Volume46
Issue4
PublisherElsevier BV
DOIdoi:10.1016/j.commatsci.2009.05.005Search in ResearchGate
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Mindat Ref. ID9505653Long-form Identifiermindat:1:5:9505653:1
GUID0
Full ReferenceSun, Guodong, Li, Hejun, Fu, Qiangang, Huang, Min, Cao, Wei, Wu, Heng (2009) Finite element simulation of the effects of process parameters on deposition uniformity of chemical-vapor-deposited silicon carbide. Computational Materials Science, 46 (4). 1002-1006 doi:10.1016/j.commatsci.2009.05.005
Plain TextSun, Guodong, Li, Hejun, Fu, Qiangang, Huang, Min, Cao, Wei, Wu, Heng (2009) Finite element simulation of the effects of process parameters on deposition uniformity of chemical-vapor-deposited silicon carbide. Computational Materials Science, 46 (4). 1002-1006 doi:10.1016/j.commatsci.2009.05.005
In(2009, October) Computational Materials Science Vol. 46 (4) Elsevier BV

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