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Long, Run, Dai, Ying, Huang, Baibiao, Sun, Xueqin (2008) First-principles study of heavily B-doped silicon. Computational Materials Science, 42 (1). 161-167 doi:10.1016/j.commatsci.2007.07.002

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Reference TypeJournal (article/letter/editorial)
TitleFirst-principles study of heavily B-doped silicon
JournalComputational Materials Science
AuthorsLong, RunAuthor
Dai, YingAuthor
Huang, BaibiaoAuthor
Sun, XueqinAuthor
Year2008 (March)Volume42
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.commatsci.2007.07.002Search in ResearchGate
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Mindat Ref. ID9504887Long-form Identifiermindat:1:5:9504887:9
GUID0
Full ReferenceLong, Run, Dai, Ying, Huang, Baibiao, Sun, Xueqin (2008) First-principles study of heavily B-doped silicon. Computational Materials Science, 42 (1). 161-167 doi:10.1016/j.commatsci.2007.07.002
Plain TextLong, Run, Dai, Ying, Huang, Baibiao, Sun, Xueqin (2008) First-principles study of heavily B-doped silicon. Computational Materials Science, 42 (1). 161-167 doi:10.1016/j.commatsci.2007.07.002
In(2008, March) Computational Materials Science Vol. 42 (1) Elsevier BV

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Long, Run, Dai, Ying, Yu, Lin, Jin, Hao, Huang, Baibiao (2008) Study of vacancy on diamond (100) (2×1) surface from first-principles. Applied Surface Science, 254. 6478-6482 doi:10.1016/j.apsusc.2008.04.060
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Guo, Meng, Dai, Ying, Huang, BaiBiao (2012) Tailoring the band gap of GaN codoped by VO for enhanced solar energy conversion from first-principles calculations. Computational Materials Science, 54. 101-104 doi:10.1016/j.commatsci.2011.10.019
Long, Run, Dai, Ying, Meng, Guo, Huang, Baibiao (2009) Energetic and electronic properties of X- (Si, Ge, Sn, Pb) doped TiO2 from first-principles. Physical Chemistry Chemical Physics, 11 (37). 8165pp. doi:10.1039/b903298c
Yandong, Ma, Dai, Ying, Huang, Baibiao (2011) Magnetism in non-transition-metal doped CdS studied by density functional theory. Computational Materials Science, 50 (5). 1661-1666 doi:10.1016/j.commatsci.2010.12.025
Sun, Qilong, Dai, Ying, Ma, Yandong, Wei, Wei, Huang, Baibiao (2015) Lateral heterojunctions within monolayer h-BN/graphene: a first-principles study. RSC Advances, 5 (42). 33037-33043 doi:10.1039/c5ra03056k
Yang, Kesong, Dai, Ying, Huang, Baibiao (2008) First-principles calculations for geometrical structures and electronic properties of Si-doped TiO2. Chemical Physics Letters, 456. 71-75 doi:10.1016/j.cplett.2008.03.018
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Matsubara, Masahiko, Massobrio, Carlo, Parlebas, Jean-Claude (2005) First principles calculation study of multi-silicon doped fullerenes. Computational Materials Science, 33 (1). 237-243 doi:10.1016/j.commatsci.2004.12.042
 
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