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Sun, Yu, Gu, Wenxiang, Li, Yuanzuo, Li, Yongqing, Ma, Fengcai (2007) Excited state properties of the p- and n-type semiconductors of thiazolothiazole derivative having thiophene and trifluormethylphenyl rings. Computational Materials Science, 39 (2). 376-380 doi:10.1016/j.commatsci.2006.07.007

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Reference TypeJournal (article/letter/editorial)
TitleExcited state properties of the p- and n-type semiconductors of thiazolothiazole derivative having thiophene and trifluormethylphenyl rings
JournalComputational Materials Science
AuthorsSun, YuAuthor
Gu, WenxiangAuthor
Li, YuanzuoAuthor
Li, YongqingAuthor
Ma, FengcaiAuthor
Year2007 (April)Volume39
Issue2
PublisherElsevier BV
DOIdoi:10.1016/j.commatsci.2006.07.007Search in ResearchGate
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Mindat Ref. ID9504644Long-form Identifiermindat:1:5:9504644:6
GUID0
Full ReferenceSun, Yu, Gu, Wenxiang, Li, Yuanzuo, Li, Yongqing, Ma, Fengcai (2007) Excited state properties of the p- and n-type semiconductors of thiazolothiazole derivative having thiophene and trifluormethylphenyl rings. Computational Materials Science, 39 (2). 376-380 doi:10.1016/j.commatsci.2006.07.007
Plain TextSun, Yu, Gu, Wenxiang, Li, Yuanzuo, Li, Yongqing, Ma, Fengcai (2007) Excited state properties of the p- and n-type semiconductors of thiazolothiazole derivative having thiophene and trifluormethylphenyl rings. Computational Materials Science, 39 (2). 376-380 doi:10.1016/j.commatsci.2006.07.007
In(2007, April) Computational Materials Science Vol. 39 (2) Elsevier BV

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