| Reference Type | Journal (article/letter/editorial) |
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| Title | Electronic properties of GaN at high-pressure from local density and generalized gradient approximations |
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| Journal | Computational Materials Science |
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| Authors | Saib, S. | Author |
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| Bouarissa, N. | Author |
| Year | 2006 (October) | Volume | 37 |
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| Issue | 4 |
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| Publisher | Elsevier BV |
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| DOI | doi:10.1016/j.commatsci.2005.12.024Search in ResearchGate |
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| Generate Citation Formats |
| Mindat Ref. ID | 9504463 | Long-form Identifier | mindat:1:5:9504463:3 |
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| GUID | 0 |
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| Full Reference | Saib, S., Bouarissa, N. (2006) Electronic properties of GaN at high-pressure from local density and generalized gradient approximations. Computational Materials Science, 37 (4). 613-617 doi:10.1016/j.commatsci.2005.12.024 |
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| Plain Text | Saib, S., Bouarissa, N. (2006) Electronic properties of GaN at high-pressure from local density and generalized gradient approximations. Computational Materials Science, 37 (4). 613-617 doi:10.1016/j.commatsci.2005.12.024 |
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| In | (2006, October) Computational Materials Science Vol. 37 (4) Elsevier BV |
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