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Lakdja, A., Bouhafs, B., Ruterana, P. (2005) Ordering effects on the electronic structures of AlN/GaN, InN/GaN and InN/AlN superlattices. Computational Materials Science, 33 (1). 157-162 doi:10.1016/j.commatsci.2004.12.054

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Reference TypeJournal (article/letter/editorial)
TitleOrdering effects on the electronic structures of AlN/GaN, InN/GaN and InN/AlN superlattices
JournalComputational Materials Science
AuthorsLakdja, A.Author
Bouhafs, B.Author
Ruterana, P.Author
Year2005 (April)Volume33
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.commatsci.2004.12.054Search in ResearchGate
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Mindat Ref. ID9504138Long-form Identifiermindat:1:5:9504138:0
GUID0
Full ReferenceLakdja, A., Bouhafs, B., Ruterana, P. (2005) Ordering effects on the electronic structures of AlN/GaN, InN/GaN and InN/AlN superlattices. Computational Materials Science, 33 (1). 157-162 doi:10.1016/j.commatsci.2004.12.054
Plain TextLakdja, A., Bouhafs, B., Ruterana, P. (2005) Ordering effects on the electronic structures of AlN/GaN, InN/GaN and InN/AlN superlattices. Computational Materials Science, 33 (1). 157-162 doi:10.1016/j.commatsci.2004.12.054
In(2005, April) Computational Materials Science Vol. 33 (1) Elsevier BV

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Lakdja, A., Bouhafs, B., Ruterana, P. (2006) Full-potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk. physica status solidi (a), 203 (9). 2247-2253 doi:10.1002/pssa.200566036
Burton, B. P., van de Walle, A., Kattner, U. (2006) First principles phase diagram calculations for the wurtzite-structure systems AlN–GaN, GaN–InN, and AlN–InN. Journal of Applied Physics, 100 (11). 113528pp. doi:10.1063/1.2372309
Bogusławski, P., Rapcewicz, Krzysztof, Bernholc, J. J. (2000) Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems. Physical Review B, 61 (16) 10820-10826 doi:10.1103/physrevb.61.10820
Abbar, B., Bouhafs, B., Aourag, H., Nouet, G., Ruterana, P. (2001) First-Principles Calculations of Optical Properties of AlN, GaN, and InN Compounds under Hydrostatic Pressure. physica status solidi (b), 228 (2). 457-460 doi:10.1002/1521-3951(200111)228:2<457::aid-pssb457>3.0.co;2-6
Nougaoui, A., Ouchani, N., Velasco, V.R., Bria, D., El Boudouti, E.H., Ben Ali, J. (2011) Acoustic waves in (001) InN–AlN and InN–GaN superlattices. Surface Science, 605 (13). 1324-1330 doi:10.1016/j.susc.2011.04.030
Dridi, Z., Bouhafs, B., Ruterana, P. (2005) First-principles study of cubic AlxGa1−xN alloys. Computational Materials Science, 33 (1). 136-140 doi:10.1016/j.commatsci.2004.12.027
Muñoz, A., Kunc, K. (1994) New phases and physical properties of the semiconducting nitrides: AlN, GaN, InN. Computational Materials Science, 2 (2). 400-412 doi:10.1016/0927-0256(94)90124-4
Mora-Ramos, M.E., Velasco, V.R. (2006) AlN, GaN and InN (001) surface electronic band structure. Surface Science, 600 (14). 2868-2873 doi:10.1016/j.susc.2006.05.027
Litimein, F., Bouhafs, B., Ruterana, P. (2006) Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN. physica status solidi (a), 203 (1). 35-41 doi:10.1002/pssa.200563515
Purton, John A., Lavrentiev, Mikhail Yu., Allan, Neil L. (2007) Monte Carlo simulation of GaN/AlN and AlN/InN mixtures. Materials Chemistry and Physics, 105. 179-184 doi:10.1016/j.matchemphys.2007.04.024
Zhang, Shuo, Chen, Nanxian (2005) Lattice inversion for interatomic potentials in AlN, GaN and InN. Chemical Physics, 309. 309-321 doi:10.1016/j.chemphys.2004.09.029
 
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