| Reference Type | Journal (article/letter/editorial) |
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| Title | Quenching-dependent reversible modification of electronic structure of proton-implanted silicon |
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| Journal | Computational Materials Science |
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| Authors | Tokmoldin, S. | Author |
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| Abdullin, Kh. | Author |
| Issova, A. | Author |
| Kikkarin, S. | Author |
| Mukashev, B. | Author |
| Serikkanov, A. | Author |
| Year | 2005 (April) | Volume | 33 |
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| Issue | 1 |
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| Publisher | Elsevier BV |
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| DOI | doi:10.1016/j.commatsci.2004.12.026Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 9504110 | Long-form Identifier | mindat:1:5:9504110:4 |
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| GUID | 0 |
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| Full Reference | Tokmoldin, S., Abdullin, Kh., Issova, A., Kikkarin, S., Mukashev, B., Serikkanov, A. (2005) Quenching-dependent reversible modification of electronic structure of proton-implanted silicon. Computational Materials Science, 33 (1). 141-144 doi:10.1016/j.commatsci.2004.12.026 |
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| Plain Text | Tokmoldin, S., Abdullin, Kh., Issova, A., Kikkarin, S., Mukashev, B., Serikkanov, A. (2005) Quenching-dependent reversible modification of electronic structure of proton-implanted silicon. Computational Materials Science, 33 (1). 141-144 doi:10.1016/j.commatsci.2004.12.026 |
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| In | (2005, April) Computational Materials Science Vol. 33 (1) Elsevier BV |
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