Ihaddadene, M., Marcon, J., Idrissi-Benzohra, M., Ketata, K., Demichel, S., Flicstein, J., Pelouard, J.L., Ketata, M. (2002) Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects. Computational Materials Science, 24 (1). 257-261 doi:10.1016/s0927-0256(02)00193-3

See Also

These are possibly similar items as determined by title/reference text matching only.

	Marcon, J., Gautier, S., Koumetz, S., Ketata, K., Ketata, M. (1998) Investigation of Be diffusion in InGaAs using Kick-out mechanism. Computational Materials Science, 10 (1). 28-32 doi:10.1016/s0927-0256(97)00131-6
	Koumetz, S., Ketata, K., Ketata, M., Marcon, J. (1999) Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE. Computational Materials Science, 15 (1). 63-68 doi:10.1016/s0927-0256(98)00133-5
	Marcon, J., Ihaddadene, M., Ketata, K. (2003) Determination of beryllium and self-interstitial diffusion parameters in InGaAs. Journal of Crystal Growth, 253 (1). 174-182 doi:10.1016/s0022-0248(03)01096-0
	Marcon, J., Koumetz, S., Ketata, K., Ketata, M., Caputo, J. G. (1999) A comprehensive study of beryllium diffusion in InGaAs using different forms of kick-out mechanism. The European Physical Journal Applied Physics, 8 (1). 7-18 doi:10.1051/epjap:1999223
	Ketata, K, Ketata, M, Koumetz, S, Marcon, J (1999) Beryllium diffusion mechanisms in InGaAs compounds grown by gas source molecular beam epitaxy. Europhysics Letters (EPL), 45. 348-353 doi:10.1209/epl/i1999-00170-7
	Koumetz, S, Marcon, J, Ketata, K, Ketata, M, Launay, P (1997) Beryllium diffusion in InGaAs compounds grown by chemical beam epitaxy. Journal of Physics D: Applied Physics, 30. 757-762 doi:10.1088/0022-3727/30/5/006
	Ketata, M., Ketata, K., Koumetz, S., Marcon, J., Dubois, C. (1999) The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE under nonequilibrium conditions. The European Physical Journal Applied Physics, 8 (1). 19-24 doi:10.1051/epjap:1999224
	Koumetz, S., Ketata, K., Ihaddadene, M., Joubert, E., Ketata, M., Dubois, C. (2000) Be diffusion in InGaAs/InP heterostructures grown by gas source molecular beam epitaxy. Journal of Crystal Growth, 220 (1). 46-50 doi:10.1016/s0022-0248(00)00766-1
	Ketata, M., Ketata, K., Koumetz, S., Martin, P., Marcon, J., Dubois, C. (1998) Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy. Journal of Crystal Growth, 194 (3). 297-300 doi:10.1016/s0022-0248(98)00727-1
	Ketata, K, Ketata, M, Koumetz, S, Marcon, J (1999) Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing. Journal of Alloys and Compounds, 285. doi:10.1016/s0925-8388(99)00012-2
	Koumetz, S., Marcon, J., Ketata, K., Ketata, M., Dubon‐Chevallier, C., Launay, P., Benchimol, J. L. (1995) Be diffusion mechanisms in InGaAs during post‐growth annealing. Applied Physics Letters, 67 (15). 2161-2163 doi:10.1063/1.114753