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Caturla, Maria Jose (1998) Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon. Computational Materials Science, 12 (4). 319-332 doi:10.1016/s0927-0256(98)00024-x

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Reference TypeJournal (article/letter/editorial)
TitleToward a predictive atomistic model of ion implantation and dopant diffusion in silicon
JournalComputational Materials Science
AuthorsCaturla, Maria JoseAuthor
Year1998 (November)Volume12
Issue4
PublisherElsevier BV
DOIdoi:10.1016/s0927-0256(98)00024-xSearch in ResearchGate
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Mindat Ref. ID9502933Long-form Identifiermindat:1:5:9502933:3
GUID0
Full ReferenceCaturla, Maria Jose (1998) Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon. Computational Materials Science, 12 (4). 319-332 doi:10.1016/s0927-0256(98)00024-x
Plain TextCaturla, Maria Jose (1998) Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon. Computational Materials Science, 12 (4). 319-332 doi:10.1016/s0927-0256(98)00024-x
In(1998, November) Computational Materials Science Vol. 12 (4) Elsevier BV

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Zhu, Jing (1998) Ab initio pseudopotential calculations of dopant diffusion in Si. Computational Materials Science, 12 (4). 309-318 doi:10.1016/s0927-0256(98)00023-8
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Tang, Qiheng, Wang, Tzuchiang (1998) Correlative reference model and molecular dynamics simulation of dislocation emission process. Computational Materials Science, 12 (2). 73-83 doi:10.1016/s0927-0256(98)00034-2
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