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Prosandeyev, Serguei A., Boureau, Gérard, Carniato, Stéphane (1998) Treatment of electrostatic interactions at the Si(1 0 0)-SiO2 interface. Computational Materials Science, 10 (1). 159-162 doi:10.1016/s0927-0256(97)00140-7

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Reference TypeJournal (article/letter/editorial)
TitleTreatment of electrostatic interactions at the Si(1 0 0)-SiO2 interface
JournalComputational Materials Science
AuthorsProsandeyev, Serguei A.Author
Boureau, GérardAuthor
Carniato, StéphaneAuthor
Year1998 (February)Volume10
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0927-0256(97)00140-7Search in ResearchGate
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Mindat Ref. ID9502832Long-form Identifiermindat:1:5:9502832:5
GUID0
Full ReferenceProsandeyev, Serguei A., Boureau, Gérard, Carniato, Stéphane (1998) Treatment of electrostatic interactions at the Si(1 0 0)-SiO2 interface. Computational Materials Science, 10 (1). 159-162 doi:10.1016/s0927-0256(97)00140-7
Plain TextProsandeyev, Serguei A., Boureau, Gérard, Carniato, Stéphane (1998) Treatment of electrostatic interactions at the Si(1 0 0)-SiO2 interface. Computational Materials Science, 10 (1). 159-162 doi:10.1016/s0927-0256(97)00140-7
In(1998, February) Computational Materials Science Vol. 10 (1) Elsevier BV

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Capron, N., Lagraa, A., Carniato, S., Boureau, G. (1998) Use of semi-empirical potentials to simulate the Si(1 0 0)-SiO2 interface. Computational Materials Science, 10 (1). 163-167 doi:10.1016/s0927-0256(97)00141-9
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