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Malin, T. V., Gilinskii, A. M., Mansurov, V. G., Protasov, D. Yu., Shestakov, A. K., Yakimov, E. B., Zhuravlev, K. S. (2015) MBE-grown AlGaN/GaN heterostructures for UV photodetectors. Technical Physics, 60 (4). 546-552 doi:10.1134/s1063784215040209

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Reference TypeJournal (article/letter/editorial)
TitleMBE-grown AlGaN/GaN heterostructures for UV photodetectors
JournalTechnical Physics
AuthorsMalin, T. V.Author
Gilinskii, A. M.Author
Mansurov, V. G.Author
Protasov, D. Yu.Author
Shestakov, A. K.Author
Yakimov, E. B.Author
Zhuravlev, K. S.Author
Year2015 (April)Volume60
Issue4
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063784215040209Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9008535Long-form Identifiermindat:1:5:9008535:2
GUID0
Full ReferenceMalin, T. V., Gilinskii, A. M., Mansurov, V. G., Protasov, D. Yu., Shestakov, A. K., Yakimov, E. B., Zhuravlev, K. S. (2015) MBE-grown AlGaN/GaN heterostructures for UV photodetectors. Technical Physics, 60 (4). 546-552 doi:10.1134/s1063784215040209
Plain TextMalin, T. V., Gilinskii, A. M., Mansurov, V. G., Protasov, D. Yu., Shestakov, A. K., Yakimov, E. B., Zhuravlev, K. S. (2015) MBE-grown AlGaN/GaN heterostructures for UV photodetectors. Technical Physics, 60 (4). 546-552 doi:10.1134/s1063784215040209
In(2015, April) Technical Physics Vol. 60 (4) Pleiades Publishing Ltd

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Malin, T. V., Milakhin, D. S., Aleksandrov, I. A., Zemlyakov, V. E., Egorkin, V. I., Zaitsev, A. A., Protasov, D. Yu., Kozhukhov, A. S., Ber, B. Ya., Kazantsev, D. Yu., Mansurov, V. G., Zhuravlev, K. S. (2019) Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors. Technical Physics Letters, 45. 761-764 doi:10.1134/s1063785019080108
Zhuravlev, K. S., Malin, T. V., Mansurov, V. G., Zemlyakov, V. E., Egorkin, V. I., Parnes, Ya. M. (2016) Normally off transistors based on in situ passivated AlN/GaN heterostructures. Technical Physics Letters, 42. 750-753 doi:10.1134/s1063785016070312
Sukhanov, M. A., Bakarov, A. K., Protasov, D. Yu., Zhuravlev, K. S. (2020) AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy. Technical Physics Letters, 46 (2) 154-157 doi:10.1134/s1063785020020285
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Mansurov, V. G.; Malin, T. V.; Milakhin, D. S.; Bashkatov, D. D.; Zemlyakov, V. E.; Guminov, N. V.; Egorkin, V. I. (2025) Reduction of current collapse in NH3-MBE-grown in situ SiN/AlGaN/AlN/GaN high electron mobility transistors on a SiC substrate. Journal of Applied Physics, 138 (12). doi:10.1063/5.0279167
 
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