| Reference Type | Journal (article/letter/editorial) |
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| Title | Photosensitivity of GaAs: NGaP: N/GaAs (GaP) heterojunctions in linearly polarized radiation |
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| Journal | Technical Physics |
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| Authors | Ivanov-Omskii, V. I. | Author |
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| Rud’, Yu. V. | Author |
| Rud’, V. Yu. | Author |
| Year | 1999 (June) | Volume | 44 |
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| Issue | 6 |
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| Publisher | Pleiades Publishing Ltd |
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| DOI | doi:10.1134/1.1259456Search in ResearchGate |
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| Generate Citation Formats |
| Mindat Ref. ID | 9003604 | Long-form Identifier | mindat:1:5:9003604:6 |
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| GUID | 0 |
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| Full Reference | Ivanov-Omskii, V. I., Rud’, Yu. V., Rud’, V. Yu. (1999) Photosensitivity of GaAs: NGaP: N/GaAs (GaP) heterojunctions in linearly polarized radiation. Technical Physics, 44 (6). 732-735 doi:10.1134/1.1259456 |
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| Plain Text | Ivanov-Omskii, V. I., Rud’, Yu. V., Rud’, V. Yu. (1999) Photosensitivity of GaAs: NGaP: N/GaAs (GaP) heterojunctions in linearly polarized radiation. Technical Physics, 44 (6). 732-735 doi:10.1134/1.1259456 |
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| In | (1999, June) Technical Physics Vol. 44 (6) Pleiades Publishing Ltd |
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