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Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, DenBaars, Steven P., Speck, James S. (2019) Interwell carrier transport in InGaN/(In)GaN multiple quantum wells. Applied Physics Letters, 114 (15). 151103pp. doi:10.1063/1.5092585

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Reference TypeJournal (article/letter/editorial)
TitleInterwell carrier transport in InGaN/(In)GaN multiple quantum wells
JournalApplied Physics Letters
AuthorsMarcinkevičius, SauliusAuthor
Yapparov, RinatAuthor
Kuritzky, Leah Y.Author
Wu, Yuh-RennAuthor
Nakamura, ShujiAuthor
DenBaars, Steven P.Author
Speck, James S.Author
Year2019 (April 15)Volume114
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.5092585Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8656307Long-form Identifiermindat:1:5:8656307:5
GUID0
Full ReferenceMarcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, DenBaars, Steven P., Speck, James S. (2019) Interwell carrier transport in InGaN/(In)GaN multiple quantum wells. Applied Physics Letters, 114 (15). 151103pp. doi:10.1063/1.5092585
Plain TextMarcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, DenBaars, Steven P., Speck, James S. (2019) Interwell carrier transport in InGaN/(In)GaN multiple quantum wells. Applied Physics Letters, 114 (15). 151103pp. doi:10.1063/1.5092585
In(2019, April) Applied Physics Letters Vol. 114 (15) AIP Publishing

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Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, Speck, James S. (2020) Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport. Physical Review B, 101 (7) doi:10.1103/physrevb.101.075305
Yapparov, Rinat, Tak, Tanay, Ewing, Jacob, Wu, Feng, Nakamura, Shuji, DenBaars, Steven P., Speck, James S., Marcinkevičius, Saulius (2024) Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects. Applied Physics Letters, 125 (3) doi:10.1063/5.0215336
Marcinkevičius, Saulius, Yapparov, Rinat, Chow, Yi Chao, Lynsky, Cheyenne, Nakamura, Shuji, DenBaars, Steven P., Speck, James S. (2021) High internal quantum efficiency of long wavelength InGaN quantum wells. Applied Physics Letters, 119 (7) 71102pp. doi:10.1063/5.0063237
Marcinkevičius, Saulius, Tak, Tanay, Chow, Yi Chao, Wu, Feng, Yapparov, Rinat, DenBaars, Steven P., Nakamura, Shuji, Speck, James S. (2024) Dynamics of carrier injection through V-defects in long wavelength GaN LEDs. Applied Physics Letters, 124 (18) doi:10.1063/5.0206357
Marcinkevičius, Saulius, Yapparov, Rinat, Tak, Tanay, Ewing, Javob, Wu, Feng, DenBaars, Steven P., Nakamura, Shuji, Speck, James S. (2024) Volumetric carrier injection in InGaN quantum well light emitting diodes. Lithuanian Journal of Physics, 64 (4). doi:10.3952/physics.2024.64.4.2
Yapparov, Rinat; Quevedo, Alejandro; Tak, Tanay; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.; Marcinkevičius, Saulius (2025) Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs. Applied Physics Letters, 126 (21). doi:10.1063/5.0271165
Ivanov, Ruslan, Marcinkevičius, Saulius, Uždavinys, Tomas K., Kuritzky, Leah Y., Nakamura, Shuji, Speck, James S. (2017) Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells. Applied Physics Letters, 110 (3). 31109pp. doi:10.1063/1.4974297
Yapparov, Rinat, Chow, Yi Chao, Lynsky, Cheyenne, Wu, Feng, Nakamura, Shuji, Speck, James S., Marcinkevičius, Saulius (2020) Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells. Journal of Applied Physics, 128 (22) 225703pp. doi:10.1063/5.0031863
Marcinkevičius, S., Kelchner, K. M., Kuritzky, L. Y., Nakamura, S., DenBaars, S. P., Speck, J. S. (2013) Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells. Applied Physics Letters, 103 (11). 111107pp. doi:10.1063/1.4820839
Yapparov, Rinat, Tak, Tanay, Ewing, Jacob, Nakamura, Shuji, DenBaars, Steven P., Speck, James S., Marcinkevičius, Saulius (2024) Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence. Journal of Applied Physics, 136 (8). doi:10.1063/5.0227663
Marcinkevičius, Saulius, Ewing, Jacob, Yapparov, Rinat, Wu, Feng, Nakamura, Shuji, Speck, James S. (2023) Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs. Applied Physics Letters, 123 (20) doi:10.1063/5.0179513
 
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