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Pan, Wenwu, Wang, Lijuan, Zhang, Yanchao, Lei, Wen, Wang, Shumin (2019) MBE growth strategy and optimization of GaAsBi quantum well light emitting structure beyond 1.2 μm. Applied Physics Letters, 114 (15). 152102pp. doi:10.1063/1.5086540

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Reference TypeJournal (article/letter/editorial)
TitleMBE growth strategy and optimization of GaAsBi quantum well light emitting structure beyond 1.2 μm
JournalApplied Physics Letters
AuthorsPan, WenwuAuthor
Wang, LijuanAuthor
Zhang, YanchaoAuthor
Lei, WenAuthor
Wang, ShuminAuthor
Year2019 (April 15)Volume114
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.5086540Search in ResearchGate
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Mindat Ref. ID8656267Long-form Identifiermindat:1:5:8656267:8
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Full ReferencePan, Wenwu, Wang, Lijuan, Zhang, Yanchao, Lei, Wen, Wang, Shumin (2019) MBE growth strategy and optimization of GaAsBi quantum well light emitting structure beyond 1.2 μm. Applied Physics Letters, 114 (15). 152102pp. doi:10.1063/1.5086540
Plain TextPan, Wenwu, Wang, Lijuan, Zhang, Yanchao, Lei, Wen, Wang, Shumin (2019) MBE growth strategy and optimization of GaAsBi quantum well light emitting structure beyond 1.2 μm. Applied Physics Letters, 114 (15). 152102pp. doi:10.1063/1.5086540
In(2019, April) Applied Physics Letters Vol. 114 (15) AIP Publishing

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