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Bermudez, V. M. (2014) Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001). Applied Physics Letters, 104 (14). 141605pp. doi:10.1063/1.4871242

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Reference TypeJournal (article/letter/editorial)
TitleTheoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001)
JournalApplied Physics Letters
AuthorsBermudez, V. M.Author
Year2014 (April 7)Volume104
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.4871242Search in ResearchGate
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Mindat Ref. ID8622508Long-form Identifiermindat:1:5:8622508:7
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Full ReferenceBermudez, V. M. (2014) Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001). Applied Physics Letters, 104 (14). 141605pp. doi:10.1063/1.4871242
Plain TextBermudez, V. M. (2014) Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001). Applied Physics Letters, 104 (14). 141605pp. doi:10.1063/1.4871242
In(2014, April) Applied Physics Letters Vol. 104 (14) AIP Publishing

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Bermudez, V. M. (2013) The effects of the initial stages of native-oxide formation on the surface properties of GaSb (001). Journal of Applied Physics, 114 (2). 24903pp. doi:10.1063/1.4812740
Bermudez, V. M. (2013) First-principles study of the interaction of H2O with the GaSb (001) surface. Journal of Applied Physics, 113 (18). 184906pp. doi:10.1063/1.4803704
Cicero, Giancarlo, Catellani, Alessandra (2001) First principles study of the initial stages of SiC growth on Si(001). Applied Physics Letters, 78 (16). 2312-2314 doi:10.1063/1.1366358
Mar, H. A., Salansky, N., Chee, K. T. (1984) Study of the initial stages of growth of CdTe on (001)GaAs. Applied Physics Letters, 44 (9). 898-900 doi:10.1063/1.94927
Maeda, F., Sugahara, H., Oshima, M., Michikami, O. (1991) Initial stages of Ga and As growth on EuBa2Cu3O7−y(001). Applied Physics Letters, 59 (3). 363-365 doi:10.1063/1.105596
Schmidt, O. G., Lange, C., Eberl, K. (1999) Photoluminescence study of the initial stages of island formation for Ge pyramids/domes and hut clusters on Si(001). Applied Physics Letters, 75 (13). 1905-1907 doi:10.1063/1.124867
Bermudez, V. M. (1988) Growth and structure of aluminum films on (001) silicon carbide. Journal of Applied Physics, 63 (10). 4951-4959 doi:10.1063/1.340439
Bermudez, V. M. (1992) Study of the initial formation of silicon carbide by reaction of tetraethyl silane with silicon. Journal of Applied Physics, 71 (11). 5450-5459 doi:10.1063/1.350516
El-Atwani, Osman, Allain, J. P., Suslova, Anastassiya (2012) The effect of native oxide on ion-sputtering-induced nanostructure formation on GaSb surfaces. Applied Physics Letters, 101 (25). 251606pp. doi:10.1063/1.4772980
Bom, N. M., Soares, G. V., Hartmann, S., Bordin, A., Radtke, C. (2014) GeO2/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications. Applied Physics Letters, 105 (14). 141605pp. doi:10.1063/1.4898062
Neuwald, U., Hessel, H. E., Feltz, A., Memmert, U., Behm, R. J. (1992) Initial stages of native oxide growth on hydrogen passivated Si(111) surfaces studied by scanning tunneling microscopy. Applied Physics Letters, 60 (11). 1307-1309 doi:10.1063/1.107325
 
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