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Ueno, Kohei, Kobayashi, Atsushi, Ohta, Jitsuo, Oshima, Masaharu, Fujioka, Hiroshi (2011) Demonstration of enhanced optical polarization for improved deep ultraviolet light extraction in coherently grown semipolar Al0.83Ga0.17N/AlN on ZnO substrates. Applied Physics Letters, 99 (12). 121906pp. doi:10.1063/1.3641876

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Reference TypeJournal (article/letter/editorial)
TitleDemonstration of enhanced optical polarization for improved deep ultraviolet light extraction in coherently grown semipolar Al0.83Ga0.17N/AlN on ZnO substrates
JournalApplied Physics Letters
AuthorsUeno, KoheiAuthor
Kobayashi, AtsushiAuthor
Ohta, JitsuoAuthor
Oshima, MasaharuAuthor
Fujioka, HiroshiAuthor
Year2011 (September 19)Volume99
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.3641876Search in ResearchGate
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Mindat Ref. ID8596015Long-form Identifiermindat:1:5:8596015:6
GUID0
Full ReferenceUeno, Kohei, Kobayashi, Atsushi, Ohta, Jitsuo, Oshima, Masaharu, Fujioka, Hiroshi (2011) Demonstration of enhanced optical polarization for improved deep ultraviolet light extraction in coherently grown semipolar Al0.83Ga0.17N/AlN on ZnO substrates. Applied Physics Letters, 99 (12). 121906pp. doi:10.1063/1.3641876
Plain TextUeno, Kohei, Kobayashi, Atsushi, Ohta, Jitsuo, Oshima, Masaharu, Fujioka, Hiroshi (2011) Demonstration of enhanced optical polarization for improved deep ultraviolet light extraction in coherently grown semipolar Al0.83Ga0.17N/AlN on ZnO substrates. Applied Physics Letters, 99 (12). 121906pp. doi:10.1063/1.3641876
In(2011, September) Applied Physics Letters Vol. 99 (12) AIP Publishing

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Kobayashi, Atsushi, Ueno, Kohei, Ohta, Jitsuo, Oshima, Masaharu, Fujioka, Hiroshi (2013) Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO. Applied Physics Letters, 103 (19). 192111pp. doi:10.1063/1.4829478
Tamaki, Hiroaki, Kobayashi, Atsushi, Ohta, Jitsuo, Oshima, Masaharu, Fujioka, Hiroshi (2011) Dependence on composition of the optical polarization properties of m-plane InxGa1−xN commensurately grown on ZnO. Applied Physics Letters, 99 (6). 61912pp. doi:10.1063/1.3624462
Ueno, Kohei, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi (2007) Growth temperature dependence of structural properties of AlN films on ZnO (0001¯) substrates. Applied Physics Letters, 90 (14). 141908pp. doi:10.1063/1.2719167
Ueno, Kohei, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi, Amanai, Hidetaka, Nagao, Satoru, Horie, Hideyoshi (2007) Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers. Applied Physics Letters, 91 (8). 81915pp. doi:10.1063/1.2775035
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Kim, Myunghee, Ohta, Jitsuo, Kobayashi, Atsushi, Fujioka, Hiroshi, Oshima, Masaharu (2007) Epitaxial growth mechanisms of AlN on SiC substrates at room temperature. Applied Physics Letters, 91 (15). 151903pp. doi:10.1063/1.2795804
Ueno, Kohei, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi (2010) Structural and Optical Properties of Nonpolar AlN(11\bar20) Films Grown on ZnO(11\bar20) Substrates with a Room-Temperature GaN Buffer Layer. Japanese Journal of Applied Physics, 49 (6) 60213 doi:10.1143/jjap.49.060213
Kobayashi, Atsushi, Ohnishi, Tsuyoshi, Lippmaa, Mikk, Oda, Yasuhiro, Ishii, Akira, Ohta, Jitsuo, Oshima, Masaharu, Fujioka, Hiroshi (2011) Polarity replication across m-plane GaN/ZnO interfaces. Applied Physics Letters, 99 (18). 181910pp. doi:10.1063/1.3659008
Ueno, Kohei, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi (2006) Layer-by-Layer Growth of AlN on ZnO(000$\bar{1}$) Substrates at Room Temperature. Japanese Journal of Applied Physics, 45. doi:10.1143/jjap.45.l1139
Kajima, Tomofumi, Kobayashi, Atsushi, Ueno, Kohei, Shimomoto, Kazuma, Fujii, Tomoaki, Ohta, Jitsuo, Fujioka, Hiroshi, Oshima, Masaharu (2010) Room-Temperature Epitaxial Growth of High-Qualitym-Plane InAlN Films on Nearly Lattice-Matched ZnO Substrates. Japanese Journal of Applied Physics, 49 (7) 70202 doi:10.1143/jjap.49.070202
Fujii, Tomoaki, Kobayashi, Atsushi, Ohta, Jitsuo, Oshima, Masaharu, Fujioka, Hiroshi (2010) Structural characteristics of semipolar InN (112l) films grown on yttria stabilized zirconia substrates. physica status solidi (a), 207 (10). 2269-2271 doi:10.1002/pssa.201026215
 
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