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Fang, H., Sang, L. W., Zhao, L. B., Qi, S. L., Zhang, Y. Z., Yang, X. L., Yang, Z. J., Zhang, G. Y. (2008) Luminescent properties in the strain adjusted phosphor-free GaN based white light-emitting diode. Applied Physics Letters, 93 (26). 261117pp. doi:10.1063/1.3063044

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Reference TypeJournal (article/letter/editorial)
TitleLuminescent properties in the strain adjusted phosphor-free GaN based white light-emitting diode
JournalApplied Physics Letters
AuthorsFang, H.Author
Sang, L. W.Author
Zhao, L. B.Author
Qi, S. L.Author
Zhang, Y. Z.Author
Yang, X. L.Author
Yang, Z. J.Author
Zhang, G. Y.Author
Year2008 (December 29)Volume93
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3063044Search in ResearchGate
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Mindat Ref. ID8570397Long-form Identifiermindat:1:5:8570397:7
GUID0
Full ReferenceFang, H., Sang, L. W., Zhao, L. B., Qi, S. L., Zhang, Y. Z., Yang, X. L., Yang, Z. J., Zhang, G. Y. (2008) Luminescent properties in the strain adjusted phosphor-free GaN based white light-emitting diode. Applied Physics Letters, 93 (26). 261117pp. doi:10.1063/1.3063044
Plain TextFang, H., Sang, L. W., Zhao, L. B., Qi, S. L., Zhang, Y. Z., Yang, X. L., Yang, Z. J., Zhang, G. Y. (2008) Luminescent properties in the strain adjusted phosphor-free GaN based white light-emitting diode. Applied Physics Letters, 93 (26). 261117pp. doi:10.1063/1.3063044
In(2008, December) Applied Physics Letters Vol. 93 (26) AIP Publishing

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