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Pau, J. L., Bayram, C., Giedraitis, P., McClintock, R., Razeghi, M. (2008) GaN nanostructured p-i-n photodiodes. Applied Physics Letters, 93 (22). 221104pp. doi:10.1063/1.3041641

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Reference TypeJournal (article/letter/editorial)
TitleGaN nanostructured p-i-n photodiodes
JournalApplied Physics Letters
AuthorsPau, J. L.Author
Bayram, C.Author
Giedraitis, P.Author
McClintock, R.Author
Razeghi, M.Author
Year2008 (December)Volume93
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.3041641Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8569710Long-form Identifiermindat:1:5:8569710:8
GUID0
Full ReferencePau, J. L., Bayram, C., Giedraitis, P., McClintock, R., Razeghi, M. (2008) GaN nanostructured p-i-n photodiodes. Applied Physics Letters, 93 (22). 221104pp. doi:10.1063/1.3041641
Plain TextPau, J. L., Bayram, C., Giedraitis, P., McClintock, R., Razeghi, M. (2008) GaN nanostructured p-i-n photodiodes. Applied Physics Letters, 93 (22). 221104pp. doi:10.1063/1.3041641
In(2008, December) Applied Physics Letters Vol. 93 (22) AIP Publishing

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Bayram, C., Pau, J. L., McClintock, R., Razeghi, M., Ulmer, M. P., Silversmith, D. (2008) High quantum efficiency back-illuminated GaN avalanche photodiodes. Applied Physics Letters, 93 (21). 211107pp. doi:10.1063/1.3039061
Bayram, C., Pau, J. L., McClintock, R., Razeghi, M. (2008) Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type δ-doping. Applied Physics Letters, 92 (24). 241103pp. doi:10.1063/1.2948857
Pau, J. L., Bayram, C., McClintock, R., Razeghi, M., Silversmith, D. (2008) Back-illuminated separate absorption and multiplication GaN avalanche photodiodes. Applied Physics Letters, 92 (10). 101120pp. doi:10.1063/1.2897039
McClintock, R., Pau, J. L., Minder, K., Bayram, C., Kung, P., Razeghi, M. (2007) Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes. Applied Physics Letters, 90 (14). 141112pp. doi:10.1063/1.2720712
Minder, K., Pau, J. L., McClintock, R., Kung, P., Bayram, C., Razeghi, M., Silversmith, D. (2007) Scaling in back-illuminated GaN avalanche photodiodes. Applied Physics Letters, 91 (7). 73513pp. doi:10.1063/1.2772199
Pau, J. L., McClintock, R., Minder, K., Bayram, C., Kung, P., Razeghi, M., Muñoz, E., Silversmith, D. (2007) Geiger-mode operation of back-illuminated GaN avalanche photodiodes. Applied Physics Letters, 91 (4). 41104pp. doi:10.1063/1.2759980
Bayram, C., Pau, J. L., McClintock, R., Razeghi, M. (2008) Delta-doping optimization for high quality p-type GaN. Journal of Applied Physics, 104 (8). 83512pp. doi:10.1063/1.3000564
Vashaei, Z., Cicek, E., Bayram, C., McClintock, R., Razeghi, M. (2010) GaN avalanche photodiodes grown on m-plane freestanding GaN substrate. Applied Physics Letters, 96 (20). 201908pp. doi:10.1063/1.3432408
Cicek, E., Vashaei, Z., McClintock, R., Bayram, C., Razeghi, M. (2010) Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates. Applied Physics Letters, 96 (26). 261107pp. doi:10.1063/1.3457783
Bayram, C., Teherani, F. Hosseini, Rogers, D. J., Razeghi, M. (2008) A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN. Applied Physics Letters, 93 (8). 81111pp. doi:10.1063/1.2975165
McClintock, R., Yasan, A., Mayes, K., Shiell, D., Darvish, S. R., Kung, P., Razeghi, M. (2004) High quantum efficiency AlGaN solar-blind p-i-n photodiodes. Applied Physics Letters, 84 (8). 1248-1250 doi:10.1063/1.1650550
 
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