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Hung, K. M., Cheng, T. H., Huang, W. P., Wang, K. Y., Cheng, H. H., Sun, G., Soref, R. A. (2008) Electron tunneling in a strained n-type Si1−xGex/Si/Si1−xGex double-barrier structure. Applied Physics Letters, 93 (12). 123509pp. doi:10.1063/1.2991295

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Reference TypeJournal (article/letter/editorial)
TitleElectron tunneling in a strained n-type Si1−xGex/Si/Si1−xGex double-barrier structure
JournalApplied Physics Letters
AuthorsHung, K. M.Author
Cheng, T. H.Author
Huang, W. P.Author
Wang, K. Y.Author
Cheng, H. H.Author
Sun, G.Author
Soref, R. A.Author
Year2008 (September 22)Volume93
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.2991295Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8567488Long-form Identifiermindat:1:5:8567488:8
GUID0
Full ReferenceHung, K. M., Cheng, T. H., Huang, W. P., Wang, K. Y., Cheng, H. H., Sun, G., Soref, R. A. (2008) Electron tunneling in a strained n-type Si1−xGex/Si/Si1−xGex double-barrier structure. Applied Physics Letters, 93 (12). 123509pp. doi:10.1063/1.2991295
Plain TextHung, K. M., Cheng, T. H., Huang, W. P., Wang, K. Y., Cheng, H. H., Sun, G., Soref, R. A. (2008) Electron tunneling in a strained n-type Si1−xGex/Si/Si1−xGex double-barrier structure. Applied Physics Letters, 93 (12). 123509pp. doi:10.1063/1.2991295
In(2008, September) Applied Physics Letters Vol. 93 (12) AIP Publishing

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Christou, A., Tzanetakis, P., Hatzopoulos, Z., Kyriakidis, G., Tseng, W., Wilkins, B. R. (1986) Schottky barrier formation on electron beam deposited amorphous Si1−xGex: H alloys and amorphous (Si/Si1−xGex): H modulated structures. Applied Physics Letters, 48 (6). 408-410 doi:10.1063/1.96513
Wang, K. Y., Huang, W. P., Cheng, H. H., Sun, G., Soref, R. A., Nicholas, R. J., Suen, Y. W. (2007) Observation of type-I and type-II excitons in strained Si∕SiGe quantum-well structures. Applied Physics Letters, 91 (7). 72108pp. doi:10.1063/1.2771094
Hossain, M. Z., Johnson, H. T. (2012) Electron-dependent thermoelectric properties in Si/Si1-xGex heterostructures and Si1-xGex alloys from first-principles. Applied Physics Letters, 100 (25). 253901pp. doi:10.1063/1.4729765
Christensen, J. S., Radamson, H. H., Kuznetsov, A. Yu., Svensson, B. G. (2003) Diffusion of phosphorus in relaxed Si1−xGex films and strained Si/Si1−xGex heterostructures. Journal of Applied Physics, 94 (10). 6533-6540 doi:10.1063/1.1622771
Leitz, C. W., Currie, M. T., Lee, M. L., Cheng, Z.-Y., Antoniadis, D. A., Fitzgerald, E. A. (2001) Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (xApplied Physics Letters, 79 (25). 4246-4248 doi:10.1063/1.1423774
Lim, Y. S., Lee, J. Y., Kim, H. S., Moon, D. W. (2000) Strain-induced diffusion in a strained Si1−xGex/Si heterostructure. Applied Physics Letters, 77 (25). 4157-4159 doi:10.1063/1.1327280
Fukatsu, S., Akiyama, H., Shiraki, Y., Sakaki, H. (1995) Radiative recombination in near‐surface strained Si1−xGex/Si quantum wells. Applied Physics Letters, 67 (24). 3602-3604 doi:10.1063/1.115331
Min, B.-G., Pae, Y. H., Jun, K. S., Ko, D.-H., Kim, H., Cho, M.-H., Lee, T.-W. (2006) Formation of a Ge-rich layer during the oxidation of strained Si1−xGex. Journal of Applied Physics, 100 (1). 16102pp. doi:10.1063/1.2201690
Hung, K. M., Kuo, J.-Y., Hong, C. C., Cheng, H. H., Sun, G., Soref, R. A. (2010) Carrier dynamics of terahertz emission based on strained SiGe/Si single quantum well. Applied Physics Letters, 96 (21). 213502pp. doi:10.1063/1.3432075
Namavar, F., Soref, R. A. (1991) Optical waveguiding in Si/Si1−xGex/Si heterostructures. Journal of Applied Physics, 70 (6). 3370-3372 doi:10.1063/1.349276
Xu, D. X., Shen, G. D., Willander, M., Hansson, G. V., Luy, J. F., Schäffler, F. (1991) Variations of resonant tunneling properties with temperature in strained Si1−xGex/Si double‐barrier structures. Applied Physics Letters, 58 (22). 2500-2502 doi:10.1063/1.104856
 
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