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Lehnhardt, T., Hümmer, M., Rößner, K., Müller, M., Höfling, S., Forchel, A. (2008) Continuous wave single mode operation of GaInAsSb∕GaSb quantum well lasers emitting beyond 3μm. Applied Physics Letters, 92 (18). 183508pp. doi:10.1063/1.2926657

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Reference TypeJournal (article/letter/editorial)
TitleContinuous wave single mode operation of GaInAsSb∕GaSb quantum well lasers emitting beyond 3μm
JournalApplied Physics Letters
AuthorsLehnhardt, T.Author
Hümmer, M.Author
Rößner, K.Author
Müller, M.Author
Höfling, S.Author
Forchel, A.Author
Year2008 (May 5)Volume92
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.2926657Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8563245Long-form Identifiermindat:1:5:8563245:7
GUID0
Full ReferenceLehnhardt, T., Hümmer, M., Rößner, K., Müller, M., Höfling, S., Forchel, A. (2008) Continuous wave single mode operation of GaInAsSb∕GaSb quantum well lasers emitting beyond 3μm. Applied Physics Letters, 92 (18). 183508pp. doi:10.1063/1.2926657
Plain TextLehnhardt, T., Hümmer, M., Rößner, K., Müller, M., Höfling, S., Forchel, A. (2008) Continuous wave single mode operation of GaInAsSb∕GaSb quantum well lasers emitting beyond 3μm. Applied Physics Letters, 92 (18). 183508pp. doi:10.1063/1.2926657
In(2008, May) Applied Physics Letters Vol. 92 (18) AIP Publishing

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Kudrawiec, R., Motyka, M., Misiewicz, J., Hümmer, M., Rößner, K., Lehnhardt, T., Müller, M., Forchel, A. (2008) Room temperature contactless electroreflectance of the ground and excited state transitions in Ga0.76In0.24As0.08Sb0.92∕GaSb single quantum wells of various widths. Applied Physics Letters, 92 (4). 41910pp. doi:10.1063/1.2840161
Müller, M., Lehnhardt, T., Rößner, K., Forchel, A. (2008) Tunable lasers on GaSb using the concept of binary superimposed gratings. Applied Physics Letters, 93 (8). 81117pp. doi:10.1063/1.2977461
Motyka, M., Kudrawiec, R., Misiewicz, J., Hümmer, M., Rößner, K., Lehnhardt, T., Müller, M., Forchel, A. (2008) Photoreflectance and photoluminescence study of Ga0.76In0.24Sb/GaSb single quantum wells: Band structure and thermal quenching of photoluminescence. Journal of Applied Physics, 103 (11). 113514pp. doi:10.1063/1.2936852
Motyka, M., Sęk, G., Ryczko, K., Misiewicz, J., Lehnhardt, T., Höfling, S., Forchel, A. (2009) Optical properties of GaSb-based type II quantum wells as the active region of midinfrared interband cascade lasers for gas sensing applications. Applied Physics Letters, 94 (25). 251901pp. doi:10.1063/1.3157910
Semmel, Julia, Kaiser, Wolfgang, Hofmann, Holger, Höfling, Sven, Forchel, Alfred (2008) Single mode emitting ridge waveguide quantum cascade lasers coupled to an active ring resonator filter. Applied Physics Letters, 93 (21). 211106pp. doi:10.1063/1.3039057
Lin, C., Grau, M., Dier, O., Amann, M.-C. (2004) Low threshold room-temperature continuous-wave operation of 2.24–3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers. Applied Physics Letters, 84 (25). 5088-5090 doi:10.1063/1.1760218
Choi, H. K., Eglash, S. J., Connors, M. K. (1993) Single‐frequency GaInAsSb/AlGaAsSb quantum‐well ridge‐waveguide lasers emitting at 2.1 μm. Applied Physics Letters, 63 (24). 3271-3272 doi:10.1063/1.110171
Lang, S., Worschech, L., Emmerling, M., Strauß, M., Höfling, S., Forchel, A. (2008) Selective etching of independent contacts in a double quantum-well structure: Quantum-gate transistor. Applied Physics Letters, 92 (6). 62101pp. doi:10.1063/1.2841662
Mueller, M., Bauer, A., Lehnhardt, T., Rössner, K., Hümmer, M., Forchel, A. (2007) One dimensional and two dimensional photonic crystal GaInSb∕AlGaAsSb microlasers. Applied Physics Letters, 91 (20). 201116pp. doi:10.1063/1.2805031
Choi, H. K., Turner, G. W., Manfra, M. J., Connors, M. K. (1996) 175 K continuous wave operation of InAsSb/InAlAsSb quantum‐well diode lasers emitting at 3.5 μm. Applied Physics Letters, 68 (21). 2936-2938 doi:10.1063/1.116360
Müller, C. R., Worschech, L., Heinrich, J., Höfling, S., Forchel, A. (2008) Room temperature memory operation of a single InAs quantum dot layer in a GaAs∕AlGaAs heterostructure. Applied Physics Letters, 93 (6). 63502pp. doi:10.1063/1.2967880
 
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