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Yamane, Y., Fujiwara, K., Sheu, J. K. (2007) Largely variable electroluminescence efficiency with current and temperature in a blue (In, Ga)N multiple-quantum-well diode. Applied Physics Letters, 91 (7). 73501pp. doi:10.1063/1.2769754

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Reference TypeJournal (article/letter/editorial)
TitleLargely variable electroluminescence efficiency with current and temperature in a blue (In, Ga)N multiple-quantum-well diode
JournalApplied Physics Letters
AuthorsYamane, Y.Author
Fujiwara, K.Author
Sheu, J. K.Author
Year2007 (August 13)Volume91
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.2769754Search in ResearchGate
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Mindat Ref. ID8559949Long-form Identifiermindat:1:5:8559949:9
GUID0
Full ReferenceYamane, Y., Fujiwara, K., Sheu, J. K. (2007) Largely variable electroluminescence efficiency with current and temperature in a blue (In, Ga)N multiple-quantum-well diode. Applied Physics Letters, 91 (7). 73501pp. doi:10.1063/1.2769754
Plain TextYamane, Y., Fujiwara, K., Sheu, J. K. (2007) Largely variable electroluminescence efficiency with current and temperature in a blue (In, Ga)N multiple-quantum-well diode. Applied Physics Letters, 91 (7). 73501pp. doi:10.1063/1.2769754
In(2007, August) Applied Physics Letters Vol. 91 (7) AIP Publishing

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Inoue, T., Fujiwara, K., Sheu, J. K. (2007) Hole escape processes detrimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions. Applied Physics Letters, 90 (16). 161109pp. doi:10.1063/1.2723683
Noriyasu, M., Fujiwara, K. (2010) Excitonic electroluminescence at room temperature in an (In,Ga)As multiple-quantum-well diode. Applied Physics Letters, 97 (3). 31103pp. doi:10.1063/1.3464559
Otsuji, N., Fujiwara, K., Sheu, J. K. (2006) Electroluminescence efficiency of blue InGaN∕GaN quantum-well diodes with and without an n-InGaN electron reservoir layer. Journal of Applied Physics, 100 (11). 113105pp. doi:10.1063/1.2398690
Jimi, H., Inada, T., Horiguchi, M., Satake, A., Fujiwara, K. (2008) Comparative study of temperature-dependent electroluminescence efficiency in blue and green (In,Ga)N multiple-quantum-well diodes. physica status solidi (c), 5 (6). 2105-2107 doi:10.1002/pssc.200778458
Fujiwara, Kenzo, Katou, Hirofumi, Inoue, Takao, Sheu, Jin-Kong (2009) Asymmetric external field effects on photoluminescence efficiency in a blue (In,Ga)N quantum-well diode with an additional n -type electron reservoir layer. physica status solidi (c), 6. doi:10.1002/pssc.200880780
Fujiwara, Kenzo, Jimi, Hiroyuki, Kaneda, Kei (2009) Temperature-dependent droop of electroluminescence efficiency in blue (In,Ga)N quantum-well diodes. physica status solidi (c), 6. doi:10.1002/pssc.200880760
Hori, A., Yasunaga, D., Satake, A., Fujiwara, K. (2003) Temperature and injection current dependence of electroluminescence intensity in green and blue InGaN single-quantum-well light-emitting diodes. Journal of Applied Physics, 93 (6). 3152-3157 doi:10.1063/1.1554475
Hori, A., Yasunaga, D., Satake, A., Fujiwara, K. (2001) Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes. Applied Physics Letters, 79 (22). 3723-3725 doi:10.1063/1.1421416
Inada, T., Satake, A., Fujiwara, K. (2007) Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes. physica status solidi (c), 4 (7). 2768-2771 doi:10.1002/pssc.200674736
Li, Y.-L., Huang, Y.-R., Lai, Y.-H. (2007) Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness. Applied Physics Letters, 91 (18). 181113pp. doi:10.1063/1.2805197
Ryu, H. Y., Ha, K. H., Chae, J. H., Kim, K. S., Son, J. K., Nam, O. H., Park, Y. J., Shim, J. I. (2006) Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics. Applied Physics Letters, 89 (17). 171106pp. doi:10.1063/1.2364273
 
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