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Mi, Y. Y., Wang, S. J., Chai, J. W., Seng, H. L., Pan, J. S., Foo, Y. L., Huan, C. H. A., Ong, C. K. (2007) Effect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGe. Applied Physics Letters, 91 (4). 42102pp. doi:10.1063/1.2762277

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Reference TypeJournal (article/letter/editorial)
TitleEffect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGe
JournalApplied Physics Letters
AuthorsMi, Y. Y.Author
Wang, S. J.Author
Chai, J. W.Author
Seng, H. L.Author
Pan, J. S.Author
Foo, Y. L.Author
Huan, C. H. A.Author
Ong, C. K.Author
Year2007 (July 23)Volume91
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.2762277Search in ResearchGate
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Mindat Ref. ID8559217Long-form Identifiermindat:1:5:8559217:7
GUID0
Full ReferenceMi, Y. Y., Wang, S. J., Chai, J. W., Seng, H. L., Pan, J. S., Foo, Y. L., Huan, C. H. A., Ong, C. K. (2007) Effect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGe. Applied Physics Letters, 91 (4). 42102pp. doi:10.1063/1.2762277
Plain TextMi, Y. Y., Wang, S. J., Chai, J. W., Seng, H. L., Pan, J. S., Foo, Y. L., Huan, C. H. A., Ong, C. K. (2007) Effect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGe. Applied Physics Letters, 91 (4). 42102pp. doi:10.1063/1.2762277
In(2007, July) Applied Physics Letters Vol. 91 (4) AIP Publishing

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