Akimoto, R., Simoyama, T., Tsuchida, H., Namiki, S., Lim, C. G., Nagase, M., Mozume, T., Hasama, T., Ishikawa, H. (2007) All-optical demultiplexing of 160–10Gbit∕s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs∕AlAs∕AlAsSb quantum well. Applied Physics Letters, 91 (22). 221115pp. doi:10.1063/1.2820382

See Also

These are possibly similar items as determined by title/reference text matching only.

	Ishikawa, Hiroshi, Tsuchida, Hidemi, Abedin, Kazi Sarwar, Simoyama, Takasi, Mozume, Teruo, Nagase, Masanori, Akimoto, Ryoichi, Miyazaki, Tetsuya, Hasama, Toshifumi (2007) Ultrafast All-Optical Refractive Index Modulation in Intersubband Transition Switch Using InGaAs/AlAs/AlAsSb Quantum Well. Japanese Journal of Applied Physics, 46. doi:10.1143/jjap.46.l157
	Kuwatsuka, H., Akimoto, R., Ogasawara, T., Gozu, S., Mozume, T., Hasama, T., Ishikawa, H. (2011) Four-wave mixing in InGaAs/AlAsSb intersubband transition optical waveguides. Journal of Applied Physics, 110 (6). 63114pp. doi:10.1063/1.3639293
	Cong, G. W., Akimoto, R., Gozu, S., Mozume, T., Hasama, T., Ishikawa, H. (2010) Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells. Applied Physics Letters, 96 (10). 101901pp. doi:10.1063/1.3357433
	Gopal, A. V., Yoshida, H., Simoyama, T., Georgiev, N., Mozume, T., Ishikawa, H. (2002) Well-width and doping-density dependence of 1.35 μm intersubband transition in InGaAs/AlAsSb quantum wells. Applied Physics Letters, 80 (25). 4696-4698 doi:10.1063/1.1489479
	Ogasawara, Takeshi, Gozu, Shinichiro, Mozume, Teruo, Akita, Kazumichi, Akimoto, Ryoichi, Kuwatsuka, Haruhiko, Hasama, Toshifumi, Ishikawa, Hiroshi (2011) Ultrafast electron dynamics of intersubband excitation concerning cross-phase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well. Applied Physics Letters, 98 (25). 251104pp. doi:10.1063/1.3601929
	Mozume, T., Kasai, J., Nagase, M., Simoyama, T., Ishikawa, H. (2007) Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy. Journal of Crystal Growth, 301. 177-180 doi:10.1016/j.jcrysgro.2006.11.070
	Nagase, Masanori, Mozume, Teruo, Simoyama, Takasi, Hasama, Toshifumi, Ishikawa, Hiroshi (2007) Strain compensation for InGaAs–AlAs–AlAsSb coupled double quantum wells by controlling the barrier layer composition. Journal of Crystal Growth, 301. 240-243 doi:10.1016/j.jcrysgro.2006.11.089
	Cong, G. W., Akimoto, R., Akita, K., Gozu, S., Mozume, T., Hasama, T., Ishikawa, H. (2009) Experimental and theoretical study of cross-phase modulation in InGaAs/AlAsSb coupled double quantum wells with a AlGaAs coupling barrier. Physical Review B, 80 (3) doi:10.1103/physrevb.80.035306
	Kasai, J., Mozume, T., Yoshida, H., Simoyama, T., Gopal, A. V., Ishikawa, H. (2004) Optical quality improvement of InGaAs/AlAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy. physica status solidi (c), 1 (2). 368-371 doi:10.1002/pssc.200303942
	Venu Gopal, Achanta, Yoshida, Haruhiko, Simoyama, Takasi, Kasai, Junichi, Mozume, Teruo, Ishikawa, Hiroshi (2003) Room-temperature dephasing time of intersubband transitions in heavily-doped InGaAs/AlAs/AlAsSb coupled quantum wells. Applied Physics Letters, 83 (9). 1854-1856 doi:10.1063/1.1606500
	Cong, G. W., Akimoto, R., Nagase, M., Mozume, T., Hasama, T., Ishikawa, H. (2008) Mechanism of ultrafast modulation of the refraction index in photoexcitedInxGa1−xAs/AlAsySb1−yquantum well waveguides. Physical Review B, 78 (7) doi:10.1103/physrevb.78.075308