Lin, Kung-Liang, Chang, Edward-Yi, Hsiao, Yu-Lin, Huang, Wei-Ching, Li, Tingkai, Tweet, Doug, Maa, Jer-Shen, Hsu, Sheng-Teng, Lee, Ching-Ting (2007) Growth of GaN film on 150mm Si (111) using multilayer AlN∕AlGaN buffer by metal-organic vapor phase epitaxy method. Applied Physics Letters, 91 (22). 222111pp. doi:10.1063/1.2818675

See Also

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	Hsiao, Yu-Lin, Lu, Lung-Chi, Wu, Chia-Hsun, Chang, Edward Yi, Kuo, Chien-I, Maa, Jer-Shen, Lin, Kung-Liang, Luong, Tien-Tung, Huang, Wei-Ching, Chang, Chia-Hua, Dee, Chang Fu, Majlis, Burhanuddin Yeop (2012) Effect of Graded Al$_{x}$Ga$_{1-x}$N Layers on the Properties of GaN Grown on Patterned Si Substrates. Japanese Journal of Applied Physics, 51. 25505 doi:10.1143/jjap.51.025505
	Tweet, Douglas J., Lee, Jong Jan, Maa, Jer-Shen, Hsu, Sheng Teng (2005) Characterization and reduction of twist in Ge on insulator produced by localized liquid phase epitaxy. Applied Physics Letters, 87 (14). 141908pp. doi:10.1063/1.2077860
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	Chang, Shane, Lung Wei, Lin, Tung Luong, Tien, Chang, Ching, Chang, Li (2017) Threading dislocation reduction in three-dimensionally grown GaN islands on Si (111) substrate with AlN/AlGaN buffer layers. Journal of Applied Physics, 122 (10). 105306pp. doi:10.1063/1.5002079
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	Wong, Yuen-Yee, Chen, Yu-Kong, Maa, Jer-Shen, Yu, Hung-Wei, Tu, Yung-Yi, Dee, Chang-Fu, Yap, Chi-Chin, Yi Chang, Edward (2013) Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 103 (15). 152104pp. doi:10.1063/1.4824894