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Dumas-Bouchiat, F., Champeaux, C., Catherinot, A., Crunteanu, A., Blondy, P. (2007) rf-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition. Applied Physics Letters, 91 (22). 223505pp. doi:10.1063/1.2815927

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Reference TypeJournal (article/letter/editorial)
Titlerf-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition
JournalApplied Physics Letters
AuthorsDumas-Bouchiat, F.Author
Champeaux, C.Author
Catherinot, A.Author
Crunteanu, A.Author
Blondy, P.Author
Year2007 (November 26)Volume91
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2815927Search in ResearchGate
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Mindat Ref. ID8557984Long-form Identifiermindat:1:5:8557984:8
GUID0
Full ReferenceDumas-Bouchiat, F., Champeaux, C., Catherinot, A., Crunteanu, A., Blondy, P. (2007) rf-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition. Applied Physics Letters, 91 (22). 223505pp. doi:10.1063/1.2815927
Plain TextDumas-Bouchiat, F., Champeaux, C., Catherinot, A., Crunteanu, A., Blondy, P. (2007) rf-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition. Applied Physics Letters, 91 (22). 223505pp. doi:10.1063/1.2815927
In(2007, November) Applied Physics Letters Vol. 91 (22) AIP Publishing

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