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Collazo, R., Mita, S., Rice, A., Dalmau, R. F., Sitar, Z. (2007) Simultaneous growth of a GaN p∕n lateral polarity junction by polar selective doping. Applied Physics Letters, 91 (21). 212103pp. doi:10.1063/1.2816893

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Reference TypeJournal (article/letter/editorial)
TitleSimultaneous growth of a GaN p∕n lateral polarity junction by polar selective doping
JournalApplied Physics Letters
AuthorsCollazo, R.Author
Mita, S.Author
Rice, A.Author
Dalmau, R. F.Author
Sitar, Z.Author
Year2007 (November 19)Volume91
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.2816893Search in ResearchGate
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Mindat Ref. ID8557916Long-form Identifiermindat:1:5:8557916:7
GUID0
Full ReferenceCollazo, R., Mita, S., Rice, A., Dalmau, R. F., Sitar, Z. (2007) Simultaneous growth of a GaN p∕n lateral polarity junction by polar selective doping. Applied Physics Letters, 91 (21). 212103pp. doi:10.1063/1.2816893
Plain TextCollazo, R., Mita, S., Rice, A., Dalmau, R. F., Sitar, Z. (2007) Simultaneous growth of a GaN p∕n lateral polarity junction by polar selective doping. Applied Physics Letters, 91 (21). 212103pp. doi:10.1063/1.2816893
In(2007, November) Applied Physics Letters Vol. 91 (21) AIP Publishing

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Collazo, Ramón, Mita, Seiji, Rice, Anthony, Dalmau, Rafael, Wellenius, Patrick, Muth, John, Sitar, Zlatko (2008) Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity. physica status solidi (c), 5 (6). 1977-1979 doi:10.1002/pssc.200778624
Collazo, Ramón, Mita, Seiji, Xie, Jinqiao, Rice, Anthony, Tweedie, James, Dalmau, Rafael, Sitar, Zlatko (2010) Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity. physica status solidi (a), 207 (1). 45-48 doi:10.1002/pssa.200982629
Mita, S., Collazo, R., Sitar, Z. (2009) Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition. Journal of Crystal Growth, 311 (10). 3044-3048 doi:10.1016/j.jcrysgro.2009.01.075
Mita, S., Collazo, R., Rice, A., Dalmau, R. F., Sitar, Z. (2008) Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 104 (1). 13521pp. doi:10.1063/1.2952027
Xie, J., Mita, S., Collazo, R., Rice, A., Tweedie, J., Sitar, Z. (2010) The effect of N-polar GaN domains as Ohmic contacts. Applied Physics Letters, 97 (12). 123502pp. doi:10.1063/1.3491173
Collazo, R., Mita, S., Dalmau, R., Sitar, Z. (2007) Impact of polarity control and related defects on the electrical properties of GaN grown by MOVPE. physica status solidi (c), 4 (7). 2597-2600 doi:10.1002/pssc.200674874
Aleksov, Aleksandar, Collazo, Ramon, Mita, Seiji, Schlesser, Raoul, Sitar, Zlatko (2006) Current-voltage characteristics of n∕n lateral polarity junctions in GaN. Applied Physics Letters, 89 (5). 52117pp. doi:10.1063/1.2244046
Rice, A., Collazo, R., Tweedie, J., Dalmau, R., Mita, S., Xie, J., Sitar, Z. (2010) Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition. Journal of Applied Physics, 108 (4). 43510pp. doi:10.1063/1.3467522
Mita, Seiji, Collazo, Ramón, Dalmau, Rafael, Sitar, Zlatko (2007) Growth of highly resistive Ga-polar GaN by LP-MOVPE. physica status solidi (c), 4 (7). 2260-2263 doi:10.1002/pssc.200674837
Quiñones, C. E.; Reddy, P.; Mita, S.; Rathkanthiwar, S.; Liu, C.-I.; Khachariya, D.; Kirste, R.; Collazo, R.; Sitar, Z. (2026) High-current, high-voltage AlN p–n junction diodes enabled by compositional grading. Applied Physics Letters, 128 (2). doi:10.1063/5.0309581
Paisley, E. A., Shelton, T. C., Mita, S., Collazo, R., Christen, H. M., Sitar, Z., Biegalski, M. D., Maria, J.-P. (2012) Surfactant assisted growth of MgO films on GaN. Applied Physics Letters, 101 (9). 92904pp. doi:10.1063/1.4748886
 
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