Zhang, Riqing, Zhang, Panfeng, Kang, Tingting, Fan, Haibo, Liu, Xianglin, Yang, Shaoyan, Wei, Hongyuan, Zhu, Qinsheng, Wang, Zhanguo (2007) Determination of the valence band offset of wurtzite InN∕ZnO heterojunction by x-ray photoelectron spectroscopy. Applied Physics Letters, 91 (16). 162104pp. doi:10.1063/1.2800311

See Also

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	Zhang, Riqing, Guo, Yan, Song, Huaping, Liu, Xianglin, Yang, Shaoyan, Wei, Hongyuan, Zhu, Qinsheng, Wang, Zhanguo (2008) Band alignment of InN∕GaAs heterojunction determined by x-ray photoelectron spectroscopy. Applied Physics Letters, 93 (12). 122111pp. doi:10.1063/1.2992194
	Xu, Xiaoqing, Liu, Xianglin, Guo, Yan, Wang, Jun, Song, Huaping, Yang, Shaoyan, Wei, Hongyuan, Zhu, Qinsheng, Wang, Zhanguo (2010) Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy. Journal of Applied Physics, 107 (10). 104510pp. doi:10.1063/1.3408777
	Zheng, Gaolin, Wang, Jun, Liu, Xianglin, Yang, Anli, Song, Huaping, Guo, Yan, Wei, Hongyuan, Jiao, Chunmei, Yang, Shaoyan, Zhu, Qinsheng, Wang, Zhanguo (2010) Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy. Applied Surface Science, 256. 7327-7330 doi:10.1016/j.apsusc.2010.05.074
	Li, Huijie, Liu, Xianglin, Sang, Ling, Wang, Jianxia, Jin, Dongdong, Zhang, Heng, Yang, Shaoyan, Liu, Shuman, Mao, Wei, Hao, Yue, Zhu, Qinsheng, Wang, Zhanguo (2014) Determination of polar C-plane and nonpolar A-plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy. physica status solidi (b), 251 (4). 788-791 doi:10.1002/pssb.201350199
	Zhang, P. F., Liu, X. L., Zhang, R. Q., Fan, H. B., Song, H. P., Wei, H. Y., Jiao, C. M., Yang, S. Y., Zhu, Q. S., Wang, Z. G. (2008) Valence band offset of MgO∕InN heterojunction measured by x-ray photoelectron spectroscopy. Applied Physics Letters, 92 (4). 42906pp. doi:10.1063/1.2839611
	Zhang, P. F., Liu, X. L., Zhang, R. Q., Fan, H. B., Yang, A. L., Wei, H. Y., Jin, P., Yang, S. Y., Zhu, Q. S., Wang, Z. G. (2008) Valence band offset of ZnO∕GaAs heterojunction measured by x-ray photoelectron spectroscopy. Applied Physics Letters, 92 (1). 12104pp. doi:10.1063/1.2828860
	Song, H. P., Yang, A. L., Wei, H. Y., Guo, Y., Zhang, B., Zheng, G. L., Yang, S. Y., Liu, X. L., Zhu, Q. S., Wang, Z. G., Yang, T. Y., Wang, H. H. (2009) Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy. Applied Physics Letters, 94 (22). 222114pp. doi:10.1063/1.3151956
	Xu, Xiaoqing, Liu, Xianglin, Yang, Shaoyan, Liu, Jianming, Wei, Hongyuan, Zhu, Qinsheng, Wang, Zhanguo (2009) Dislocation core effect scattering in a quasitriangle potential well. Applied Physics Letters, 94 (11). 112102pp. doi:10.1063/1.3098356
	Zhang, B. L., Sun, G. S., Guo, Y., Zhang, P. F., Zhang, R. Q., Fan, H. B., Liu, X. L., Yang, S. Y., Zhu, Q. S., Wang, Z. G. (2008) Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy. Applied Physics Letters, 93 (24). 242107pp. doi:10.1063/1.3046116
	Fan, H. B., Sun, G. S., Yang, S. Y., Zhang, P. F., Zhang, R. Q., Wei, H. Y., Jiao, C. M., Liu, X. L., Chen, Y. H., Zhu, Q. S., Wang, Z. G. (2008) Valence band offset of ZnO∕4H-SiC heterojunction measured by x-ray photoelectron spectroscopy. Applied Physics Letters, 92 (19). 192107pp. doi:10.1063/1.2926679
	Li, Huijie, Liu, Xianglin, Wang, Jianxia, Jin, Dongdong, Zhang, Heng, Yang, Shaoyan, Liu, Shuman, Mao, Wei, Hao, Yue, Zhu, QinSheng, Wang, Zhanguo (2012) Calculation of discrepancies in measured valence band offsets of heterojunctions with different crystal polarities. Journal of Applied Physics, 112 (11). 113712pp. doi:10.1063/1.4768707