Lewis, L., Corbett, B., O Mahony, D., Maaskant, P. P. (2007) Low-resistance Ni-based Schottky diodes on freestanding n-GaN. Applied Physics Letters, 91 (16). 162103pp. doi:10.1063/1.2799739

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Reference Type	Journal (article/letter/editorial)
Title	Low-resistance Ni-based Schottky diodes on freestanding n-GaN
Journal	Applied Physics Letters
Authors	Lewis, L.		Author
	Corbett, B.		Author
	O Mahony, D.		Author
	Maaskant, P. P.		Author
Year	2007 (October 15)	Volume	91
Issue	16
Publisher	AIP Publishing
DOI	doi:10.1063/1.2799739Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8556503	Long-form Identifier	mindat:1:5:8556503:0
GUID	0
Full Reference	Lewis, L., Corbett, B., O Mahony, D., Maaskant, P. P. (2007) Low-resistance Ni-based Schottky diodes on freestanding n-GaN. Applied Physics Letters, 91 (16). 162103pp. doi:10.1063/1.2799739
Plain Text	Lewis, L., Corbett, B., O Mahony, D., Maaskant, P. P. (2007) Low-resistance Ni-based Schottky diodes on freestanding n-GaN. Applied Physics Letters, 91 (16). 162103pp. doi:10.1063/1.2799739
In	(2007, October) Applied Physics Letters Vol. 91 (16) AIP Publishing

	Charash, R., Maaskant, P. P., Lewis, L., McAleese, C., Kappers, M. J., Humphreys, C. J., Corbett, B. (2009) Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes. Applied Physics Letters, 95 (15). 151103pp. doi:10.1063/1.3244203
	Cahill, R., Maaskant, P. P., Akhter, M., Corbett, B. (2019) High power surface emitting InGaN superluminescent light-emitting diodes. Applied Physics Letters, 115 (17). 171102pp. doi:10.1063/1.5118953
	Charash, R., Kim-Chauveau, H., Lamy, J-M., Akther, M., Maaskant, P. P., Frayssinet, E., de Mierry, P., Dräger, A. D., Duboz, J-Y., Hangleiter, A., Corbett, B. (2011) Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding. Applied Physics Letters, 98 (20). 201112pp. doi:10.1063/1.3589974
	*Lewis, L., Casey, D. P., Jeyaseelan, A. V., Rohan, J. F., Maaskant, P. P. (2008) Electroless nickel/gold Ohmic contacts to p-type GaN. Applied Physics Letters, 92 (6). 62113pp. doi:10.1063/1.2842425*
	Kalaitzakis, F. G., Pelekanos, N. T., Prystawko, P., Leszczynski, M., Konstantinidis, G. (2007) Low resistance as-deposited Cr∕Au contacts on p-type GaN. Applied Physics Letters, 91 (26). 261103pp. doi:10.1063/1.2828044
	Nishikawa, Atsushi, Kumakura, Kazuhide, Makimoto, Toshiki (2006) High breakdown voltage with low on-state resistance of p-InGaN∕n-GaN vertical conducting diodes on n-GaN substrates. Applied Physics Letters, 89 (15). 153509pp. doi:10.1063/1.2360227
	Vostokov, N. V., Drozdov, M. N., Kraev, S. A., Lobanov, D. N., Novikov, A. V., Yunin, P. A. (2022) All-epitaxial Al/AlGaN/GaN low-barrier Schottky diodes. Applied Physics Letters, 121 (23) 233507 doi:10.1063/5.0131031
	Zhang, B. J., Egawa, T., Zhao, G. Y., Ishikawa, H., Umeno, M., Jimbo, T. (2001) Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates. Applied Physics Letters, 79 (16). 2567-2569 doi:10.1063/1.1410355
	Nela, Luca, Erine, Catherine, Matioli, Elison (2021) p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes. Applied Physics Letters, 119 (26) 263508pp. doi:10.1063/5.0074543
	Huang, S., Shen, B., Wang, M. J., Xu, F. J., Wang, Y., Yang, H. Y., Lin, F., Lu, L., Chen, Z. P., Qin, Z. X., Yang, Z. J., Zhang, G. Y. (2007) Current transport mechanism of Au∕Ni∕GaN Schottky diodes at high temperatures. Applied Physics Letters, 91 (7). 72109pp. doi:10.1063/1.2772182
	Jang, Ja-Soon (2008) High output power GaN-based light-emitting diodes using an electrically reverse-connected p-Schottky diode and p-InGaN–GaN superlattice. Applied Physics Letters, 93 (8). 81118pp. doi:10.1063/1.2977471

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Lewis, L., Corbett, B., O Mahony, D., Maaskant, P. P. (2007) Low-resistance Ni-based Schottky diodes on freestanding n-GaN. Applied Physics Letters, 91 (16). 162103pp. doi:10.1063/1.2799739

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