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Kutsuki, Katsuhiro, Okamoto, Gaku, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2007) Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation. Applied Physics Letters, 91 (16). 163501pp. doi:10.1063/1.2799260

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Reference TypeJournal (article/letter/editorial)
TitleHumidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation
JournalApplied Physics Letters
AuthorsKutsuki, KatsuhiroAuthor
Okamoto, GakuAuthor
Hosoi, TakujiAuthor
Shimura, TakayoshiAuthor
Watanabe, HeijiAuthor
Year2007 (October 15)Volume91
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.2799260Search in ResearchGate
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Mindat Ref. ID8556487Long-form Identifiermindat:1:5:8556487:3
GUID0
Full ReferenceKutsuki, Katsuhiro, Okamoto, Gaku, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2007) Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation. Applied Physics Letters, 91 (16). 163501pp. doi:10.1063/1.2799260
Plain TextKutsuki, Katsuhiro, Okamoto, Gaku, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2007) Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation. Applied Physics Letters, 91 (16). 163501pp. doi:10.1063/1.2799260
In(2007, October) Applied Physics Letters Vol. 91 (16) AIP Publishing

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Kutsuki, Katsuhiro, Okamoto, Gaku, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2009) Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100). Applied Physics Letters, 95 (2). 22102pp. doi:10.1063/1.3171938
Kutsuki, Katsuhiro, Okamoto, Gaku, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2008) Characteristics of Pure Ge3N4Dielectric Layers Formed by High-Density Plasma Nitridation. Japanese Journal of Applied Physics, 47 (4) 2415-2419 doi:10.1143/jjap.47.2415
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Kutsuki, Katsuhiro, Hideshima, Iori, Okamoto, Gaku, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric. Japanese Journal of Applied Physics, 50. 10106 doi:10.1143/jjap.50.010106
Watanabe, Heiji, Kutsuki, Katsuhiro, Hideshima, Iori, Okamoto, Gaku, Hosoi, Takuji, Shimura, Takayoshi (2011) Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100). Key Engineering Materials, 470. 152-157 doi:10.4028/www.scientific.net/kem.470.152
Kutsuki, Katsuhiro, Hideshima, Iori, Okamoto, Gaku, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric. Japanese Journal of Applied Physics, 50 (1) 10106 doi:10.7567/jjap.50.010106
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Hosoi, Takuji, Suzuki, Yuichiro, Shimura, Takayoshi, Watanabe, Heiji (2014) Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy. Applied Physics Letters, 105 (17). 173502pp. doi:10.1063/1.4900442
 
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