Park, Young Sam, Lee, Seung Yun, Yoon, Sung Min, Jung, Soon Won, Yu, Byoung Gon, Lee, Soo Jin, Yoon, Soon Gil (2007) Nonvolatile programmable metallization cell memory switching element based on Ag-doped SbTe solid electrolyte. Applied Physics Letters, 91 (16). 162107pp. doi:10.1063/1.2789663
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Nonvolatile programmable metallization cell memory switching element based on Ag-doped SbTe solid electrolyte | ||
| Journal | Applied Physics Letters | ||
| Authors | Park, Young Sam | Author | |
| Lee, Seung Yun | Author | ||
| Yoon, Sung Min | Author | ||
| Jung, Soon Won | Author | ||
| Yu, Byoung Gon | Author | ||
| Lee, Soo Jin | Author | ||
| Yoon, Soon Gil | Author | ||
| Year | 2007 (October 15) | Volume | 91 |
| Issue | 16 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.2789663Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8556437 | Long-form Identifier | mindat:1:5:8556437:8 |
| GUID | 0 | ||
| Full Reference | Park, Young Sam, Lee, Seung Yun, Yoon, Sung Min, Jung, Soon Won, Yu, Byoung Gon, Lee, Soo Jin, Yoon, Soon Gil (2007) Nonvolatile programmable metallization cell memory switching element based on Ag-doped SbTe solid electrolyte. Applied Physics Letters, 91 (16). 162107pp. doi:10.1063/1.2789663 | ||
| Plain Text | Park, Young Sam, Lee, Seung Yun, Yoon, Sung Min, Jung, Soon Won, Yu, Byoung Gon, Lee, Soo Jin, Yoon, Soon Gil (2007) Nonvolatile programmable metallization cell memory switching element based on Ag-doped SbTe solid electrolyte. Applied Physics Letters, 91 (16). 162107pp. doi:10.1063/1.2789663 | ||
| In | (2007, October) Applied Physics Letters Vol. 91 (16) AIP Publishing | ||
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