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Kang, B. S., Wang, H. T., Ren, F., Gila, B. P., Abernathy, C. R., Pearton, S. J., Johnson, J. W., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J. (2007) pH sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region. Applied Physics Letters, 91 (1). 12110pp. doi:10.1063/1.2754637

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Reference TypeJournal (article/letter/editorial)
TitlepH sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region
JournalApplied Physics Letters
AuthorsKang, B. S.Author
Wang, H. T.Author
Ren, F.Author
Gila, B. P.Author
Abernathy, C. R.Author
Pearton, S. J.Author
Johnson, J. W.Author
Rajagopal, P.Author
Roberts, J. C.Author
Piner, E. L.Author
Linthicum, K. J.Author
Year2007 (July 2)Volume91
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.2754637Search in ResearchGate
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Mindat Ref. ID8555727Long-form Identifiermindat:1:5:8555727:1
GUID0
Full ReferenceKang, B. S., Wang, H. T., Ren, F., Gila, B. P., Abernathy, C. R., Pearton, S. J., Johnson, J. W., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J. (2007) pH sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region. Applied Physics Letters, 91 (1). 12110pp. doi:10.1063/1.2754637
Plain TextKang, B. S., Wang, H. T., Ren, F., Gila, B. P., Abernathy, C. R., Pearton, S. J., Johnson, J. W., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J. (2007) pH sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region. Applied Physics Letters, 91 (1). 12110pp. doi:10.1063/1.2754637
In(2007, July) Applied Physics Letters Vol. 91 (1) AIP Publishing

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