Chen, Tron-Min, Wang, Shui-Jinn, Uang, Kai-Ming, Chen, Shiue-Lung, Tsai, Wei-Chih, Lee, Wei-Chi, Tsai, Ching-Chung (2007) Use of anisotropic laser etching to the top n-GaN layer to alleviate current-crowding effect in vertical-structured GaN-based light-emitting diodes. Applied Physics Letters, 90 (4). 41115pp. doi:10.1063/1.2432254
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Use of anisotropic laser etching to the top n-GaN layer to alleviate current-crowding effect in vertical-structured GaN-based light-emitting diodes | ||
| Journal | Applied Physics Letters | ||
| Authors | Chen, Tron-Min | Author | |
| Wang, Shui-Jinn | Author | ||
| Uang, Kai-Ming | Author | ||
| Chen, Shiue-Lung | Author | ||
| Tsai, Wei-Chih | Author | ||
| Lee, Wei-Chi | Author | ||
| Tsai, Ching-Chung | Author | ||
| Year | 2007 (January 22) | Volume | 90 |
| Issue | 4 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.2432254Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8554996 | Long-form Identifier | mindat:1:5:8554996:2 |
| GUID | 0 | ||
| Full Reference | Chen, Tron-Min, Wang, Shui-Jinn, Uang, Kai-Ming, Chen, Shiue-Lung, Tsai, Wei-Chih, Lee, Wei-Chi, Tsai, Ching-Chung (2007) Use of anisotropic laser etching to the top n-GaN layer to alleviate current-crowding effect in vertical-structured GaN-based light-emitting diodes. Applied Physics Letters, 90 (4). 41115pp. doi:10.1063/1.2432254 | ||
| Plain Text | Chen, Tron-Min, Wang, Shui-Jinn, Uang, Kai-Ming, Chen, Shiue-Lung, Tsai, Wei-Chih, Lee, Wei-Chi, Tsai, Ching-Chung (2007) Use of anisotropic laser etching to the top n-GaN layer to alleviate current-crowding effect in vertical-structured GaN-based light-emitting diodes. Applied Physics Letters, 90 (4). 41115pp. doi:10.1063/1.2432254 | ||
| In | (2007, January) Applied Physics Letters Vol. 90 (4) AIP Publishing | ||
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