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Liu, J. P., Li, J., See, A., Zhou, M. S., Hsia, L. C. (2007) Implant damage and strain relaxation of embedded epitaxial silicon germanium layer on silicon. Applied Physics Letters, 90 (26). 261915pp. doi:10.1063/1.2749868

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Reference TypeJournal (article/letter/editorial)
TitleImplant damage and strain relaxation of embedded epitaxial silicon germanium layer on silicon
JournalApplied Physics Letters
AuthorsLiu, J. P.Author
Li, J.Author
See, A.Author
Zhou, M. S.Author
Hsia, L. C.Author
Year2007 (June 25)Volume90
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.2749868Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8554760Long-form Identifiermindat:1:5:8554760:9
GUID0
Full ReferenceLiu, J. P., Li, J., See, A., Zhou, M. S., Hsia, L. C. (2007) Implant damage and strain relaxation of embedded epitaxial silicon germanium layer on silicon. Applied Physics Letters, 90 (26). 261915pp. doi:10.1063/1.2749868
Plain TextLiu, J. P., Li, J., See, A., Zhou, M. S., Hsia, L. C. (2007) Implant damage and strain relaxation of embedded epitaxial silicon germanium layer on silicon. Applied Physics Letters, 90 (26). 261915pp. doi:10.1063/1.2749868
In(2007, June) Applied Physics Letters Vol. 90 (26) AIP Publishing

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Liu, J. P., Li, K., Pandey, S. M., Benistant, F. L., See, A., Zhou, M. S., Hsia, L. C., Schampers, Ruud, Klenov, Dmitri O. (2008) Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain. Applied Physics Letters, 93 (22). 221912pp. doi:10.1063/1.3040323
Liu, J. P., Domenicucci, A., Madan, A., Li, J., Holt, J., Sudijono, John (2006) Impact of in situ carbon doping on implant damage and strain relaxation of epitaxial silicon germanium layer on silicon. Applied Physics Letters, 88 (15). 151916pp. doi:10.1063/1.2194893
Wong, C. P., Kasim, J., Liu, J. P., See, A., Shen, Z. X. (2010) Channel stress measurements of 45 nm node transistors with embedded silicon-germanium source and drain using ultraviolet Raman spectroscopy. Applied Physics Letters, 96 (21). 213513pp. doi:10.1063/1.3431295
Mi, Y. Y., Yu, Z., Wang, S. J., Lim, P. C., Foo, Y. L., Huan, A. C. H., Ong, C. K. (2007) Epitaxial LaAlO3 thin film on silicon: Structure and electronic properties. Applied Physics Letters, 90 (18). 181925pp. doi:10.1063/1.2736277
Barski, A., Derivaz, M., Rouvière, J. L., Buttard, D. (2000) Epitaxial growth of germanium dots on Si(001) surface covered by a very thin silicon oxide layer. Applied Physics Letters, 77 (22). 3541-3543 doi:10.1063/1.1328771
Bojarczuk, N. A., Copel, M., Guha, S., Narayanan, V., Preisler, E. J., Ross, F. M., Shang, H. (2003) Epitaxial silicon and germanium on buried insulator heterostructures and devices. Applied Physics Letters, 83 (26). 5443-5445 doi:10.1063/1.1637716
Sturm, J. C., Garone, P. M., Schwartz, P. V. (1991) Temperature control of silicon‐germanium alloy epitaxial growth on silicon substrates by infrared transmission. Journal of Applied Physics, 69 (1). 542-544 doi:10.1063/1.347705
Wong, L. H., Liu, J. P., Romanato, F., Wong, C. C., Foo, Y. L. (2007) Strain relaxation mechanism in a reverse compositionally graded SiGe heterostructure. Applied Physics Letters, 90 (6). 61913pp. doi:10.1063/1.2472135
Himcinschi, C., Singh, R., Radu, I., Milenin, A. P., Erfurth, W., Reiche, M., Gösele, U., Christiansen, S. H., Muster, F., Petzold, M. (2007) Strain relaxation in nanopatterned strained silicon round pillars. Applied Physics Letters, 90 (2). 21902pp. doi:10.1063/1.2431476
Gariglio, S., Stucki, N., Triscone, J.-M., Triscone, G. (2007) Strain relaxation and critical temperature in epitaxial ferroelectric Pb(Zr0.20Ti0.80)O3 thin films. Applied Physics Letters, 90 (20). 202905pp. doi:10.1063/1.2740171
Finlayson, C. E., Amezcua-Correa, A., Sazio, P. J. A., Baril, N. F., Badding, J. V. (2007) Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers. Applied Physics Letters, 90 (13). 132110pp. doi:10.1063/1.2713755
 
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